IR21531D datasheet, PDF - EEWORLD Datasheet

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IR21531D: DescriptionHALF BRDG BASED MOSFET DRIVER, PDIP8; CategoryAnalog mixed-signal IC Drivers and interfaces; File Size129KB，9 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Related ProductsFound3parts with similar functions to IR21531D

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IR21531D Overview

HALF BRDG BASED MOSFET DRIVER, PDIP8

IR21531D Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	DIP
package instruction	DIP, DIP8,.3
Contacts	8
Reach Compliance Code	compli
ECCN code	EAR99
high side driver	YES
Interface integrated circuit type	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 code	R-PDIP-T8
JESD-609 code	e0
length	9.88 mm
Number of functions	1
Number of terminals	8
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP8,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	225
power supply	12 V
Certification status	Not Qualified
Maximum seat height	5.33 mm
Maximum supply voltage	16.8 V
Minimum supply voltage	10 V
Nominal supply voltage	12 V
surface mount	NO
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	7.62 mm

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Preliminary Data Sheet No. PD60131-L

IR21531D(S) & (PbF)

SELF-OSCILLATING HALF-BRIDGE DRIVER

Features

•

Integrated 600V half-bridge gate driver

•

15.6V zener clamp on Vcc

•

True micropower start up

•

Tighter initial deadtime control

•

Low temperature coefficient deadtime

•

Shutdown feature (1/6th Vcc) on C

•

Increased undervoltage lockout Hysteresis (1V)

•

Lower power level-shifting circuit

•

Constant LO, HO pulse widths at startup

•

Lower di/dt gate driver for better noise immunity

•

Low side output in phase with R

•

Internal 50nsec (typ.) bootstrap diode (IR21531D)

•

Excellent latch immunity on all inputs and outputs

•

ESD protection on all leads

•

Also available LEAD_FREE

Product Summary

OFFSET

Duty Cycle

Tr/Tp

clamp

Deadtime (typ.)

600V max.

50%

80/40ns

15.6V

0.6

µs

Packages

Description

8 Lead PDIP

8 Lead SOIC

The IR21531(D)(S) are an improved version of the

popular IR2155 and IR2151 gate driver ICs, and in-

corporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard

CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown

feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage

control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage

lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at

startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers,

and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to

maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.

Typical Connections

IR21531(S)

600V

MAX

VCC

IR21531D

600V

MAX

VCC

Shutdown

COM

Shutdown

COM

www.irf.com

IR21531D Related Products

	IR21531D	IR21531	IR21531DPbF	IR21531S	IR21531SPbF
Description	HALF BRDG BASED MOSFET DRIVER, PDIP8	HALF BRDG BASED MOSFET DRIVER, PDIP8	HALF BRDG BASED MOSFET DRIVER, PDIP8	HALF BRDG BASED MOSFET DRIVER, PDIP8	HALF BRDG BASED MOSFET DRIVER, PDSO8
Is it Rohs certified?	incompatible	incompatible	conform to	incompatible	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	DIP	DIP	DIP	SOIC	SOIC
package instruction	DIP, DIP8,.3	DIP, DIP8,.3	LEAD FREE, PLASTIC, MS-001AB, DIP-8	SOP, SOP8,.25	LEAD FREE, MS-012AA, SOIC-8
Contacts	8	8	8	8	8
Reach Compliance Code	compli	compli	unknow	compli	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
high side driver	YES	YES	YES	YES	YES
Interface integrated circuit type	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 code	R-PDIP-T8	R-PDIP-T8	R-PDIP-T8	R-PDSO-G8	R-PDSO-G8
JESD-609 code	e0	e0	e3	e0	e3
length	9.88 mm	9.88 mm	9.88 mm	4.9 mm	4.9 mm
Number of functions	1	1	1	1	1
Number of terminals	8	8	8	8	8
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	DIP	SOP	SOP
Encapsulate equivalent code	DIP8,.3	DIP8,.3	DIP8,.3	SOP8,.25	SOP8,.25
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	225	225	250	245	260
power supply	12 V	12 V	12 V	12 V	12 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	5.33 mm	5.33 mm	5.33 mm	1.75 mm	1.75 mm
Maximum supply voltage	16.8 V	16.8 V	16.8 V	16.8 V	16.8 V
Minimum supply voltage	10 V	10 V	10 V	10 V	10 V
Nominal supply voltage	12 V	12 V	12 V	12 V	12 V
surface mount	NO	NO	NO	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	30	30
width	7.62 mm	7.62 mm	7.62 mm	3.9 mm	3.9 mm

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