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SSS5N60A

Description
Advanced Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size382KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

SSS5N60A Overview

Advanced Power MOSFET

SSS5N60A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codecompli
ConfigurationSingle
Maximum drain current (Abs) (ID)2.6 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)37 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
Advanced Power MOSFET
FEATURES
!
Logic Level Gate Drive
!
Avalanche Rugged Technology
!
Rugged Gate Oxide Technology
!
Lower Input Capacitance
!
Improved Gate Charge
!
Extended Safe Operating Area
!
Lower Leakage Current : 25
μA
(Max.) @ V
DS
= 600V
!
Lower R
DS(ON)
: 1.81Ω (Typ.)
SSS5N60A
BV
DSS
= 600 V
R
DS(on)
= 2.2Ω
I
D
= 2.6 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25℃)
Continuous Drain Current (T
C
=100℃)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
Value
600
2.6
1.65
10
±30
331
2.6
3.7
3.0
37
0.30
- 55 to +150
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
300
Thermal Resistance
Symbol
R
θJC
R
θJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.36
62.5
Units
℃/W
Rev. A
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