N-CHANNEL POWER MOSFETS
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| Parts packaging code | SFM |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| Avalanche Energy Efficiency Rating (Eas) | 280 mJ |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 700 V |
| Maximum drain current (Abs) (ID) | 4 A |
| Maximum drain current (ID) | 4 A |
| Maximum drain-source on-resistance | 3.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 125 W |
| Maximum power dissipation(Abs) | 125 W |
| Maximum pulsed drain current (IDM) | 2.5 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 430 ns |
| Maximum opening time (tons) | 210 ns |
| SSP4N70 | SSP4N80 | |
|---|---|---|
| Description | N-CHANNEL POWER MOSFETS | N-CHANNEL POWER MOSFETS |
| Maker | SAMSUNG | SAMSUNG |
| Parts packaging code | SFM | SFM |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknow | unknow |
| Configuration | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 700 V | 800 V |
| Maximum drain current (Abs) (ID) | 4 A | 4 A |
| Maximum drain current (ID) | 4 A | 4 A |
| Maximum drain-source on-resistance | 3.5 Ω | 3.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB | TO-220AB |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 125 W | 125 W |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE |
| Transistor component materials | SILICON | SILICON |
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