IRF530STRR datasheet, PDF - EEWORLD Datasheet

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IRF530STRR: DescriptionMOSFET N-Chan 100V 14 Amp; CategoryDiscrete semiconductor The transistor; File Size177KB，9 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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IRF530STRR Overview

MOSFET N-Chan 100V 14 Amp

IRF530STRR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Vishay
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	69 mJ
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	14 A
Maximum drain current (ID)	14 A
Maximum drain-source on-resistance	0.16 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	88 W
Maximum pulsed drain current (IDM)	56 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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IRF530S, SiHF530S

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 10 V

5.5

Single

FEATURES

100

0.16

•

Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

PAK (TO-263)

DESCRIPTION

G D

N-Channel MOSFET

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D

PAK (TO-263) is a surface mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

PAK (TO-263)

SiHF530STRL-GE3

IRF530STRLPbF

SiHF530STL-E3

PAK (TO-263)

SiHF530STRR-GE3

IRF530STRRPbF

SiHF530STR-E3

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

PAK (TO-263)

SiHF530S-GE3

IRF530SPbF

SiHF530S-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation (PCB

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mount)

Current

at 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

100

± 20

0.59

0.025

8.8

3.7

5.5

- 55 to + 175

300

UNIT

W/°C

V/ns

°C

= 25 °C

dV/dt

, T

stg

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, starting T

= 25 °C, L = 528 μH, R

= 25

,

= 14 A (see fig. 12).

c. I



14 A, dI/dt



140 A/μs, V



, T



175 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91020

S11-1046-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRF530STRR Related Products

	IRF530STRR	IRF530STRL	IRF530
Description	MOSFET N-Chan 100V 14 Amp	MOSFET N-Chan 100V 14 Amp	MOSFET N-Chan 100V 9.2 Amp
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Vishay	Vishay	Vishay
Parts packaging code	D2PAK	D2PAK	TO-220AB
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	,
Contacts	4	4	3
Reach Compliance Code	unknown	unknown	unknown
Configuration	SINGLE	SINGLE	Single
Maximum drain current (Abs) (ID)	14 A	14 A	14 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	88 W	88 W	75 W
surface mount	YES	YES	NO
Terminal surface	TIN LEAD	TIN LEAD	Tin/Lead (Sn/Pb)
ECCN code	EAR99	EAR99	-
Avalanche Energy Efficiency Rating (Eas)	69 mJ	69 mJ	-
Shell connection	DRAIN	DRAIN	-
Minimum drain-source breakdown voltage	100 V	100 V	-
Maximum drain current (ID)	14 A	14 A	-
Maximum drain-source on-resistance	0.16 Ω	0.16 Ω	-
JEDEC-95 code	TO-263AB	TO-263AB	-
JESD-30 code	R-PSSO-G2	R-PSSO-G2	-
Number of components	1	1	-
Number of terminals	2	2	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Maximum pulsed drain current (IDM)	56 A	56 A	-
Certification status	Not Qualified	Not Qualified	-
Terminal form	GULL WING	GULL WING	-
Terminal location	SINGLE	SINGLE	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-
Base Number Matches	1	1	-

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