IPT004N03LATMA1 datasheet, PDF

IPT004N03LATMA1: DescriptionMOSFET LV POWER MOS; Categorysemiconductor Discrete semiconductor; File Size1MB，12 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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MOSFET LV POWER MOS

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Infineon
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	HSOF-8
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	300 A
Rds On - Drain-Source Resistance	0.37 mOhms
Vgs th - Gate-Source Threshold Voltage	0.7 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	252 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Qualification	AEC-Q100
Channel Mode	Enhancement
Packaging	Cut Tape
Packaging	MouseReel
Packaging	Reel
Height	2.4 mm
Length	10.58 mm
Transistor Type	1 N-Channel
Width	10.1 mm
Forward Transconductance - Min	160 S
Fall Time	37 ns
Pd - Power Dissipation	300 W
Rise Time	17 ns
Factory Pack Quantity	2000
Typical Turn-Off Delay Time	149 ns
Typical Turn-On Delay Time	30 ns

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