TICP206 SERIES
SILICON TRIACS
●
●
●
●
●
1.5 A RMS
Glass Passivated Wafer
G
LP PACKAGE
(TOP VIEW)
1
2
3
400 V to 600 V Off-State Voltage
Max I
GT
of 10 mA
Package Options
PACKAGE
LP
LP with fomed leads
PACKING
Bulk
Tape and Reel
PART # SUFFIX
(None)
R
MT2
MT1
MDC2AA
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
G
MT2
MT1
MDC2AB
1
2
3
absolute maximum ratings over operating case temperature (unless otherwise noted)
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak on-state surge current half-sine-wave at (or below) 25°C case temperature (see Note 4)
Peak gate current
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 60 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
E
T
E
L
O
S
B
O
TICP206D
TICP206M
V
DRM
I
T(RMS)
I
TSM
I
TSM
I
GM
T
C
T
L
P
G(AV)
T
stg
TEST CONDITIONS
V
D
= rated V
DRM
V
supply
= +12 V†
I
G
= 0
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
V
supply
= +12 V†
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
RATING
SYMBOL
VALUE
400
600
1.5
10
12
±0.2
0.3
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
A
W
°C
°C
°C
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER
I
DRM
Repetitive peak off-
state current
Gate trigger
current
MIN
TYP
MAX
±20
8
-8
-8
10
2.5
-2.5
-2.5
2.5
V
mA
UNIT
µA
I
GT
V
GT
Gate trigger
voltage
† All voltages are with respect to Main Terminal 1.
MARCH 1988 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
TICP206 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
V
T
I
H
I
L
On-state voltage
Holding current
Latching current
I
T
= ±1 A
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= +12 V†
V
supply
= -12 V†
TEST CONDITIONS
I
G
= 50 mA
I
G
= 0
I
G
= 0
(see Note 7)
(see Note 6)
Init’ I
TM
= 100 mA
Init’ I
TM
= -100 mA
MIN
TYP
MAX
±2.2
30
-30
40
-40
UNIT
V
mA
mA
† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t
p
=
≤
1 ms, duty cycle
≤
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100
Ω,
t
p(g)
= 20
µs,
t
r
=
≤
15 ns, f = 1 kHz.
GATE TRIGGER CURRENT
vs
TEMPERATURE
100
V
supply
I
GTM
I
GT
- Gate Trigger Current - mA
+
+
-
-
10
+
-
-
+
V
GT
- Gate Trigger Voltage - V
E
T
E
L
O
S
B
O
TYPICAL CHARACTERISTICS
TC05AA
GATE TRIGGER VOLTAGE
vs
TEMPERATURE
TC05AB
10
V
AA
= ± 12 V
R
L
= 10
Ω
V
supply
I
GTM
+
+
-
-
+
-
-
+
V
AA
= ± 12 V
t
w(g)
= 20 µs
R
L
= 10
Ω
t
w(g)
= 20 µs
1
1
0·1
-60
-40
-20
0
20
40
60
80
100
120
0·1
-60
-40
-20
0
20
40
60
80
100
120
T
C
- Case Temperature - °C
T
C
- Case Temperature - °C
Figure 1.
Figure 2.
2
MARCH 1988 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
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