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STGP7NB60F

Description
N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT
CategoryDiscrete semiconductor    The transistor   
File Size251KB,8 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STGP7NB60F Overview

N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT

STGP7NB60F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codecompli
Maximum collector current (IC)14 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Gate emitter threshold voltage maximum5 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)80 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)505 ns
Nominal on time (ton)23 ns
Base Number Matches1

STGP7NB60F Related Products

STGP7NB60F STGD7NB60F
Description N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT
Is it Rohs certified? conform to conform to
Parts packaging code TO-220AB TO-252AA
package instruction TO-220, 3 PIN TO-252, DPAK-3
Contacts 3 3
Reach Compliance Code compli _compli
Maximum collector current (IC) 14 A 14 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SINGLE SINGLE
Gate emitter threshold voltage maximum 5 V 5 V
Gate-emitter maximum voltage 20 V 20 V
JEDEC-95 code TO-220AB TO-252AA
JESD-30 code R-PSFM-T3 R-PSSO-G2
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 2
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) 245 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 80 W 70 W
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 505 ns 505 ns
Nominal on time (ton) 23 ns 23 ns
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