TO
-22
0A
B
BUK9515-100A
N-channel TrenchMOS logic level FET
Rev. 3 — 19 April 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 35 A; V
sup
≤
25 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
-
-
120
mJ
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C
Min
-
-
-
-55
-
-
Typ
-
-
-
-
11.5
12
Max
100
75
230
175
14.4
15
Unit
V
A
W
°C
mΩ
mΩ
Static characteristics
NXP Semiconductors
BUK9515-100A
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base;
connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK9515-100A
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
Type number
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
V
GSM
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
pulsed; t
p
≤
50 µs
T
mb
= 25 °C
pulsed; T
mb
= 25 °C
I
D
= 35 A; V
sup
≤
25 V; R
GS
= 50
Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped
T
mb
= 25 °C
T
mb
= 100 °C
T
mb
= 25 °C; pulsed
T
mb
= 25 °C
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-10
-
-
-
-
-55
-55
-15
-
-
-
Max
100
100
10
75
53
313
230
175
175
15
75
313
120
Unit
V
V
V
A
A
A
W
°C
°C
V
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
BUK9515-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 19 April 2011
2 of 13
NXP Semiconductors
BUK9515-100A
N-channel TrenchMOS logic level FET
100
P
der
(%)
80
003aaf364
100
I
D
(%)
80
003aaf365
60
60
40
40
20
20
0
0
50
100
150
T
mb
(°C)
200
0
0
40
80
120
160
200
T
mb
(°C)
V
GS
≥
5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
003aaf379
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature
003aaf380
100
W
DSS
(%)
80
10
2
l
AV
25
°C
60
10
40
T
j
prior to avalanche = 150
°C
20
0
20
60
100
140
T
mb
(°C)
180
1
10
−3
10
−2
10
−1
1
t
AV
(ms)
10
I
D
= 75 A
Fig 3.
Normalised drain-source non-repetitive
avalanche energy as a function of
mounting-base temperature
Fig 4.
unclamped inductive load
Single-shot avalanche rating; avalanche
current as a function of avalanche period
BUK9515-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 19 April 2011
3 of 13
NXP Semiconductors
BUK9515-100A
N-channel TrenchMOS logic level FET
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
t
p
=10
μ
s
100
μ
s
003aaf366
10
1 ms
DC
1
10 ms
100 ms
10
-1
1
10
10
2
V
DS
(V)
10
3
T
mb
= 25 °C; I
DM
is single pulse
Fig 5.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
in free air
Conditions
Min
-
-
Typ
-
60
Max
0.65
-
Unit
K/W
K/W
1
Z
th(j-mb)
(K/W)
10
−1
δ
= 0.5
0.2
0.1
0.05
0.02
10
−2
0
P
003aaf367
δ
=
t
p
T
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 6.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9515-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 19 April 2011
4 of 13
NXP Semiconductors
BUK9515-100A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 100 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 175 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
measured from contact screw on
mounting base to centre of die;
T
j
= 25 °C
measured from drain lead 6 mm from
package to centre of die; T
j
= 25 °C
L
S
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
measured from source lead to source
bond pad; T
j
= 25 °C
I
S
= 75 A; V
GS
= 0 V; T
j
= 25 °C
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C
t
rr
Q
r
I
S
= 75 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C
-
-
-
-
-
-
-
-
6500
550
325
45
130
400
130
3.5
8600
660
400
65
195
560
190
-
pF
pF
pF
ns
ns
ns
ns
nH
Min
100
89
1
-
0.5
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
-
0.05
2
2
-
-
11.5
12
Max
-
-
2
2.3
-
500
10
100
100
16
40.5
14.4
15
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Static characteristics
-
-
4.5
7.5
-
-
nH
nH
Source-drain diode
V
SD
-
-
-
-
1.1
0.85
60
0.24
-
1.2
-
-
V
V
ns
µC
BUK9515-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 19 April 2011
5 of 13
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