Bipolar Transistors - BJT Bias Resistor Built-in transistor
Parameter Name | Attribute value |
Product Attribute | Attribute Value |
Manufacturer | Toshiba Semiconductor |
Product Category | Bipolar Transistors - BJT |
RoHS | Details |
Mounting Style | SMD/SMT |
Package / Case | TO-236MOD-3 |
Transistor Polarity | PNP |
Collector- Emitter Voltage VCEO Max | - 50 V |
Collector- Base Voltage VCBO | - 50 V |
Emitter- Base Voltage VEBO | - 5 V |
Collector-Emitter Saturation Voltage | - 0.3 V |
Maximum DC Collector Current | - 150 mA |
Gain Bandwidth Product fT | 80 MHz |
Packaging | Cut Tape |
Packaging | MouseReel |
Packaging | Reel |
Continuous Collector Current | - 150 mA |
Pd - Power Dissipation | 150 mW |
Factory Pack Quantity | 3000 |