APT50M65JLL datasheet, PDF - EEWORLD Datasheet

APT50M65JLL: DescriptionDiscrete Semiconductor Modules Power MOSFET - MOS7; CategoryDiscrete semiconductor The transistor; File Size100KB，6 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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Discrete Semiconductor Modules Power MOSFET - MOS7

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Microsemi
Parts packaging code	ISOTOP
package instruction	ISOTOP-4
Contacts	4
Manufacturer packaging code	ISOTOP
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	UL RECOGNIZED
Avalanche Energy Efficiency Rating (Eas)	3000 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	58 A
Maximum drain current (ID)	58 A
Maximum drain-source on-resistance	0.065 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PUFM-X4
JESD-609 code	e1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	520 W
Maximum pulsed drain current (IDM)	232 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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