STP23NM50N datasheet, PDF - EEWORLD Datasheet

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STP23NM50N: DescriptionMOSFET N-Ch 500V 0.162 Ohm MDmesh II 17A Switch; CategoryDiscrete semiconductor The transistor; File Size838KB，21 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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STP23NM50N Overview

MOSFET N-Ch 500V 0.162 Ohm MDmesh II 17A Switch

STP23NM50N Parametric

Parameter Name	Attribute value
Brand Name	STMicroelectronics
Maker	STMicroelectronics
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	16 weeks
Avalanche Energy Efficiency Rating (Eas)	254 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	17 A
Maximum drain current (ID)	17 A
Maximum drain-source on-resistance	0.19 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	68 A
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

User Manual

【User Guide】UM1575 Spice model tutorial for Power MOSFETs

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STB23NM50N, STF23NM50N

STP23NM50N, STW23NM50N

N-channel 500 V, 0.162

17 A TO-220, TO-220FP, TO-247, D²PAK

MDmesh™ II Power MOSFET

Features

Order codes

STB23NM50N

STF23NM50N

STP23NM50N

STW23NM50N

■

DSS

(@Tjmax)

DS(on)

max.

TO-220FP

550 V

< 0.19

17 A

TO-220

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

TO-247

D²PAK

Application

Switching applications

Figure 1.

Internal schematic diagram

Description

These devices are made using the second

generation of MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

Table 1.

Device summary

Marking

Package

D²PAK

TO-220FP

23NM50N

TO-220

TO-247

Tube

Packaging

Tape and reel

Order codes

STB23NM50N

STF23NM50N

STP23NM50N

STW23NM50N

May 2011

Doc ID 16913 Rev 4

1/21

www.st.com

STP23NM50N Related Products

	STP23NM50N	STW23NM50N
Description	MOSFET N-Ch 500V 0.162 Ohm MDmesh II 17A Switch	I/O Controller Interface IC USB to Dual UART bridge
Brand Name	STMicroelectronics	STMicroelectronics
Maker	STMicroelectronics	STMicroelectronics
Parts packaging code	TO-220AB	TO-247
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Factory Lead Time	16 weeks	16 weeks
Avalanche Energy Efficiency Rating (Eas)	254 mJ	254 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V
Maximum drain current (ID)	17 A	17 A
Maximum drain-source on-resistance	0.19 Ω	0.19 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-247
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	68 A	68 A
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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