BAS16DXV6T1,
BAS16DXV6T5,
SBAS16DXV6T1G
Dual Switching Diode
Features
•
AEC−Q101 Qualified and PPAP Capable
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•
Pb−Free Packages are Available
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10
ms
Symbol
V
R
I
F
I
FM(surge)
Max
100
200
500
Unit
V
mA
mA
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6
4
1
3
6
54
1
2
3
SOT−563
CASE 463A
PLASTIC
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
Derate above 25°C
Thermal Resistance Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
Derate above 25°C
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature
R
qJA
T
J
, T
stg
T
A
= 25°C
R
qJA
T
A
= 25°C
Symbol
P
D
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
−55
to
+150
Unit
mW
mW/°C
°C/W
MARKING DIAGRAM
A6 MG
G
A6 = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Symbol
P
D
Unit
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
BAS16DXV6T1
BAS16DXV6T1G
BAS16DXV6T5
BAS16DXV6T5G
SBAS16DXV6T1G
Package
SOT−563
SOT−563
(Pb−Free)
SOT−563
SOT−563
(Pb−Free)
SOT−563
(Pb−Free)
Shipping
†
4000 / Tape &
Reel
4000 / Tape &
Reel
8000 / Tape &
Reel
8000 / Tape &
Reel
8000 / Tape &
Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
−
Rev. 4
1
Publication Order Number:
BAS16DXV6/D
BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G
100
IF, FORWARD CURRENT (mA)
IR , REVERSE CURRENT (μA)
10
T
A
= 150°C
1.0
T
A
= 125°C
10
T
A
= 85°C
T
A
= 25°C
T
A
= - 40°C
T
A
= 85°C
0.1
T
A
= 55°C
0.01
T
A
= 25°C
1.0
0.1
0.2
0.4
0.6
0.8
1.0
V
F
, FORWARD VOLTAGE (VOLTS)
1.2
0.001
0
10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
50
Figure 4. Forward Voltage
Figure 5. Leakage Current
0.68
CD, DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
0.1
Figure 7. Normalized Thermal Response
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4
BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
D
−X−
6
5
4
A
L
1
2
3
E
−Y−
b
H
E
e
5
6 PL
M
C
X Y
0.08 (0.003)
DIM
A
b
C
D
E
e
L
H
E
STYLE 10:
PIN 1. CATHODE 1
2. N/C
3. CATHODE 2
4. ANODE 2
5. N/C
6. ANODE 1
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
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BAS16DXV6/D