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JAN2N5238S

Description
Bipolar Transistors - BJT Power BJT
CategoryDiscrete semiconductor    The transistor   
File Size96KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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Bipolar Transistors - BJT Power BJT

JAN2N5238S Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W3
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage170 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusQualified
GuidelineMIL-19500/394H
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)2000 ns
Maximum opening time (tons)550 ns
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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