AP2310GN datasheet, PDF - EEWORLD Datasheet

AP2310GN: DescriptionN-CHANNEL ENHANCEMENT MODE POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size69KB，4 Pages; ManufacturerAPEC; Environmental Compliance

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AP2310GN Overview

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	APEC
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	3 A
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	0.09 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
Humidity sensitivity level	3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.38 W
Maximum pulsed drain current (IDM)	10 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

	AP2310GN	AP3303J	AP3303H
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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