1N4944LEADFREE datasheet, PDF - EEWORLD Datasheet

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1N4944LEADFREE: DescriptionRectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN; CategoryDiscrete semiconductor diode; File Size403KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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1N4944LEADFREE Overview

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN

1N4944LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	E-LALF-W2
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	E-LALF-W2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Maximum output current	1 A
Package body material	GLASS
Package shape	ELLIPTICAL
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	400 V
Maximum reverse recovery time	0.15 µs
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	10
Base Number Matches	1

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1N4942

1N4943

1N4944

1N4945

1N4946

1N4947

1N4948

w w w. c e n t r a l s e m i . c o m

FAST RECOVERY

GLASS PASSIVATED

SILICON RECTIFIERS

1.0 AMP, 200 THRU 1000 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 1N4942 series

types are silicon rectifiers mounted in a hermetically

sealed, glass passivated package, designed for general

purpose applications where fast reverse recovery times

and high reliability is desired.

MARKING: FULL PART NUMBER

GPR-1A CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL 1N4942 1N4943 1N4944 1N4945 1N4946 1N4947 1N4948 UNITS

Peak Repetitive Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

VRRM

VR

200

140

300

210

400

280

1.0

50

500

350

600

420

800

560

1000

700

V

A

°C

VR(RMS)

Average Forward Current (TA=55°C)

IO

Peak Forward Surge Current

IFSM

Operating and Storage

Junction Temperature

ELECTRICAL

SYMBOL

IR

VF

CJ

trr

TJ, Tstg

-65 to +200

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

VR=Rated VRRM

IF=1.0A

VR=12V, f=1.0MHz

IF=0.5A, IR=1.0A, Irr=0.25A (1N4942 thru 1N4945)

IF=0.5A, IR=1.0A, Irr=0.25A (1N4946, 1N4947)

IF=0.5A, IR=1.0A, Irr=0.25A (1N4948)

MAX

1.0

1.3

45

150

250

500

UNITS

μA

V

pF

ns

R1 (28-February 2013)

1N4944LEADFREE Related Products

	1N4944LEADFREE	1N4946LEADFREE	1N4942LEADFREE	1N4948LEADFREE	1N4947LEADFREE	1N4943LEADFREE	1812H0500160FCT
Description	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN	Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN	Ceramic Capacitor, Multilayer, Ceramic, 50V, 1% +Tol, 1% -Tol, C0G, -/+30ppm/Cel TC, 0.000016uF, 1812,
package instruction	E-LALF-W2	HERMETIC SEALED, GPR-1A, 2 PIN	HERMETIC SEALED, GPR-1A, 2 PIN	HERMETIC SEALED, GPR-1A, 2 PIN	HERMETIC SEALED, GPR-1A, 2 PIN	HERMETIC SEALED, GPR-1A, 2 PIN	, 1812
Reach Compliance Code	compli	compli	compli	compli	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
JESD-609 code	e3	e3	e3	e3	e3	e3	e0
Number of terminals	2	2	2	2	2	2	2
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	SMT
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN	MATTE TIN	Tin/Lead (Sn90Pb10) - with Nickel (Ni) barrier
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	-
Is it Rohs certified?	conform to	conform to	conform to	conform to	-	-	incompatible
Contacts	2	2	2	2	2	2	-
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	-
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	-
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-
JESD-30 code	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	-
Number of components	1	1	1	1	1	1	-
Maximum output current	1 A	1 A	1 A	1 A	1 A	1 A	-
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	-
Package shape	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	-
Peak Reflow Temperature (Celsius)	260	260	260	260	NOT SPECIFIED	NOT SPECIFIED	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
Maximum repetitive peak reverse voltage	400 V	600 V	200 V	1000 V	800 V	300 V	-
Maximum reverse recovery time	0.15 µs	0.25 µs	0.15 µs	0.5 µs	0.25 µs	0.15 µs	-
surface mount	NO	NO	NO	NO	NO	NO	-
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	-
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	-
Maximum time at peak reflow temperature	10	10	10	10	NOT SPECIFIED	NOT SPECIFIED	-
Base Number Matches	1	1	1	1	1	1	-

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