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JANS1N5617

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-7
CategoryDiscrete semiconductor    diode   
File Size149KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANS1N5617 Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-7

JANS1N5617 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-7
package instructionHERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum output current1 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusQualified
GuidelineMIL-19500/429J
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
1N5615US thru 1N5623US
SURFACE MOUNT VOIDLESS-
HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “fast recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/429 and is ideal for high-reliability applications where a failure cannot
be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in axial-leaded package configurations for thru-hole mounting (see
separate data sheet for 1N5615 thru 1N5623). Microsemi also offers numerous
other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both
through-hole and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
Package “A”
or D-5A
FEATURES
Surface mount package series equivalent to the
JEDEC registered 1N5615 to 1N5623 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category
I”
Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/429
Axial-leaded equivalents also available (see separate
data sheet for 1N5615 thru 1N5623)
APPLICATIONS / BENEFITS
Fast recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
Junction & Storage Temperature: -65
o
C to +175
o
C
Thermal Resistance: 13
o
C/W junction to end cap
Thermal Impedance: 4.5
o
C/W @ 10 ms heating time
Average Rectified Forward Current (I
O
): 1.0 Amps @
T
A
= 55ºC
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead (Sn/Pb) finish.
MARKING & POLARITY: Cathode band only
TAPE & REEL option: Standard per EIA-481-B
WEIGHT: 193 mg
See package dimensions and recommended pad
layout on last page
REVERSE
CURRENT
(MAX.)
I
R
@ V
RWM
o
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
VOLTS
200
400
600
800
1000
MINIMUM
BREAKDOWN
VOLTAGE
V
BR
@ 50μA
VOLTS
220
440
660
880
1100
AVERAGE
RECTIFIED
CURRENT
I
O
@ T
A
(NOTE 1)
AMPS
o
o
50 C
100 C
.750
1.00
.750
1.00
.750
1.00
.750
1.00
.750
1.00
FORWAR
D
VOLTAGE
(MAX.)
V
F
@ 3A
VOLTS
.8 MIN.
CAPACITANCE
(MAX.)
C @ V
R
=
12 V
f=1 MHz
pF
45
35
25
20
15
MAXIMUM
SURGE
CURRENT
I
FSM
(NOTE 2)
AMPS
25
25
25
25
25
REVERSE
RECOVERY
(MAX.)
(NOTE 3)
t
rr
ns
150
150
250
300
500
1N5615US – 1N5623US
1N5615US
1N5617US
1N5619US
1N5621US
1N5623US
1.6
MAX.
25 C
.5
.5
.5
.5
.5
μA
o
100 C
25
25
25
25
25
NOTE 1:
From 1 Amp at T
A
= 55
o
C, derate linearly at 5.56 mA/
o
C to 0.75 Amp at T
A
= 100
o
C. From T
A
= 100
o
C,
derate linearly at 7.5 mA/
o
C to 0 Amps at T
A
= 200
o
C. These ambient ratings are for PC boards where thermal
o
resistance from mounting point to ambient is sufficiently controlled where T
J(max)
does not exceed 175 C.
NOTE 2:
T
A
= 100
o
C, f = 60 Hz, I
O
= 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3:
I
F
= 0.5A, I
RM
= 1A, I
R(REC)
= 0.250 A
Copyright
©
2009
10-06-2009 REV E; SD47A.pdf
Microsemi
Page 1
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