ESD Suppressors / TVS Diodes 4-Ln Bidirect Array
| Parameter Name | Attribute value |
| Brand Name | STMicroelectronics |
| Maker | STMicroelectronics |
| Parts packaging code | SOT |
| package instruction | R-PDSO-F6 |
| Contacts | 6 |
| Manufacturer packaging code | SOT666 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 11 weeks |
| Samacsys Description | STMicroelectronics ESDA14V2BP6 Quad Bi-Directional TVS Diode Array, 50W peak, 6-Pin SOT-666 |
| Maximum breakdown voltage | 18 V |
| Minimum breakdown voltage | 14.2 V |
| Breakdown voltage nominal value | 16.1 V |
| Configuration | COMPLEX |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 code | R-PDSO-F6 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Maximum non-repetitive peak reverse power dissipation | 50 W |
| Number of components | 4 |
| Number of terminals | 6 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| polarity | BIDIRECTIONAL |
| Certification status | Not Qualified |
| surface mount | YES |
| technology | AVALANCHE |
| Terminal surface | Matte Tin (Sn) - annealed |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
| ESDA14V2BP6 | ESDA6V1-5P6 | ESDA25-4BP6 | |
|---|---|---|---|
| Description | ESD Suppressors / TVS Diodes 4-Ln Bidirect Array | ESD Suppressors / TVS Diodes 150W 6.1V Array | ESD Suppressors / TVS Diodes TRANSIL ARRAY ESD PROTECTION |
| Brand Name | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Parts packaging code | SOT | SOT | SOT |
| package instruction | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 |
| Contacts | 6 | 6 | 6 |
| Reach Compliance Code | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Maximum breakdown voltage | 18 V | 7.2 V | 30 V |
| Minimum breakdown voltage | 14.2 V | 6.1 V | 25 V |
| Breakdown voltage nominal value | 16.1 V | 6.65 V | 27.5 V |
| Configuration | COMPLEX | COMMON ANODE, 5 ELEMENTS | COMPLEX |
| Diode component materials | SILICON | SILICON | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 code | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 |
| JESD-609 code | e3 | e3 | e3 |
| Humidity sensitivity level | 1 | 1 | 1 |
| Maximum non-repetitive peak reverse power dissipation | 50 W | 150 W | 50 W |
| Number of components | 4 | 5 | 4 |
| Number of terminals | 6 | 6 | 6 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 | NOT SPECIFIED |
| polarity | BIDIRECTIONAL | UNIDIRECTIONAL | BIDIRECTIONAL |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| technology | AVALANCHE | AVALANCHE | AVALANCHE |
| Terminal surface | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed |
| Terminal form | FLAT | FLAT | FLAT |
| Terminal location | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | 30 | 30 | NOT SPECIFIED |
| Maker | STMicroelectronics | STMicroelectronics | - |
| Manufacturer packaging code | SOT666 | - | SOT666 |
| Factory Lead Time | 11 weeks | 11 weeks | - |
| Samacsys Description | STMicroelectronics ESDA14V2BP6 Quad Bi-Directional TVS Diode Array, 50W peak, 6-Pin SOT-666 | TVS Diode Arrays 150W 6.1V Array | - |
| Base Number Matches | - | 1 | 1 |
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