CPDQR5V0H-HF datasheet, PDF - EEWORLD Datasheet

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CPDQR5V0H-HF: DescriptionESD Suppressors / TVS Diodes ESD DIODE BI-DIRECT 5V IPP=7A; CategoryDiscrete semiconductor diode; File Size100KB，4 Pages; ManufacturerComchip Technology; Websitehttp://www.comchiptech.com/; Environmental Compliance

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CPDQR5V0H-HF Overview

ESD Suppressors / TVS Diodes ESD DIODE BI-DIRECT 5V IPP=7A

CPDQR5V0H-HF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	compliant
ECCN code	EAR99
Breakdown voltage nominal value	7 V
Maximum clamping voltage	20 V
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
polarity	BIDIRECTIONAL
surface mount	YES
Base Number Matches	1

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SMD ESD Protection Diode

CPDQR5V0H-HF

RoHS Device

Halogen Free

Features

-Bi-directional ESD protection

-IEC 61000-4-5 (surge) ; IPP=7A

-IEC 61000-4-2 (ESD) ; ±30KV(contact)

-Low clamping voltage

-Low leakage current

0.026(0.65)

0.022(0.55)

0.041(1.05)

0.037(0.95)

0402/SOD-923F

Mechanical data

-Case: 0402/SOD-923F Standard package ,

molded plastic.

-Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

-Marking Code: E5

-Mounting position: Any.

-Weight: 0.001 gram (approx.).

0.020(0.50) Typ.

0.012(0.30) Typ.

0.022(0.55)

0.018(0.45)

Dimensions in inches and (millimeter)

Maximum Rating and Electrical Characteristics

(at T

=25 C unless otherwise noted)

Parameter

Diode breakdown voltage

Leakage current

Junction capacitance

ESD capability

Conditions

= 1mA

= 5V

=0V,f =1MHz

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

= 1 A, tp=8/20us

Symbol Min Typ Max Unit

ESD

STG

-55

5.5

7.0

1.0

140

125

150

Clamping Voltage

Peak Pulse Power

Operation temperature

Storage temperature

= 7 A, tp=8/20us

=8/20us

REV:A

QW-G7042

Page 1

Comchip Technology CO., LTD.

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