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30PFD60

Description
Rectifier Diode, 1 Phase, 1 Element, 1.3A, 600V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size412KB,1 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
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30PFD60 Overview

Rectifier Diode, 1 Phase, 1 Element, 1.3A, 600V V(RRM), Silicon,

30PFD60 Parametric

Parameter NameAttribute value
package instructionO-XALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-XALF-W2
Maximum non-repetitive peak forward current45 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1.3 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.045 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

30PFD60 Related Products

30PFD60
Description Rectifier Diode, 1 Phase, 1 Element, 1.3A, 600V V(RRM), Silicon,
package instruction O-XALF-W2
Reach Compliance Code unknown
ECCN code EAR99
application GENERAL PURPOSE
Shell connection ISOLATED
Configuration SINGLE
Diode component materials SILICON
Diode type RECTIFIER DIODE
JESD-30 code O-XALF-W2
Maximum non-repetitive peak forward current 45 A
Number of components 1
Phase 1
Number of terminals 2
Maximum operating temperature 150 °C
Minimum operating temperature -40 °C
Maximum output current 1.3 A
Package body material UNSPECIFIED
Package shape ROUND
Package form LONG FORM
Certification status Not Qualified
Maximum repetitive peak reverse voltage 600 V
Maximum reverse recovery time 0.045 µs
surface mount NO
Terminal form WIRE
Terminal location AXIAL
Base Number Matches 1
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