512Mb C-die DDR2 SDRAM
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | SAMSUNG |
package instruction | FBGA, BGA60,9X11,32 |
Reach Compliance Code | compli |
ECCN code | EAR99 |
Maximum access time | 0.45 ns |
Maximum clock frequency (fCLK) | 333 MHz |
I/O type | COMMON |
interleaved burst length | 4,8 |
JESD-30 code | R-PBGA-B60 |
JESD-609 code | e3 |
memory density | 536870912 bi |
Memory IC Type | DDR DRAM |
memory width | 8 |
Humidity sensitivity level | 1 |
Number of terminals | 60 |
word count | 67108864 words |
character code | 64000000 |
Maximum operating temperature | 95 °C |
Minimum operating temperature | -5 °C |
organize | 64MX8 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | FBGA |
Encapsulate equivalent code | BGA60,9X11,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, FINE PITCH |
Peak Reflow Temperature (Celsius) | 225 |
power supply | 1.8 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
Continuous burst length | 4,8 |
Maximum standby current | 0.18 A |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | YES |
technology | CMOS |
Temperature level | OTHER |
Terminal surface | MATTE TIN |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |