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K4T51083QC-ZLE6

Description
512Mb C-die DDR2 SDRAM
Categorystorage    storage   
File Size633KB,29 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
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K4T51083QC-ZLE6 Overview

512Mb C-die DDR2 SDRAM

K4T51083QC-ZLE6 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSAMSUNG
package instructionFBGA, BGA60,9X11,32
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time0.45 ns
Maximum clock frequency (fCLK)333 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B60
JESD-609 codee3
memory density536870912 bi
Memory IC TypeDDR DRAM
memory width8
Humidity sensitivity level1
Number of terminals60
word count67108864 words
character code64000000
Maximum operating temperature95 °C
Minimum operating temperature-5 °C
organize64MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA60,9X11,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
Peak Reflow Temperature (Celsius)225
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Continuous burst length4,8
Maximum standby current0.18 A
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceMATTE TIN
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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