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KA4L3M

Description
RESISTOR BUILT-IN TYPE NPN TRANSISTOR
File Size372KB,22 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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KA4L3M Overview

RESISTOR BUILT-IN TYPE NPN TRANSISTOR

DATA SHEET
SILICON TRANSISTOR
KA4xxx
RESISTOR BUILT-IN TYPE NPN TRANSISTOR
FEATURES
Compact package
Resistors built-in type
Complementary to KN4xxx
1.6 ± 0.1
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
ORDERING INFORMATION
PART NUMBER
KA4xxx
PACKAGE
SC-75 (USM)
0.8 ± 0.1
3
0 to 0.1
2
1
0.2
0.5
+0.1
–0
0.5
1.0
0.6
0.75 ± 0.05
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Note
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
I
C(pulse)
P
T
T
j
T
stg
60
50
5
0.1
0.2
0.2
150
–55 to +150
V
V
V
A
A
W
°C
°C
2
R
1
R
2
1.6 ± 0.1
EQUIVALENT CIRCUIT
3
PIN CONNECTION
1: Emitter
2: Base
3: Collector
Note
PW
10 ms, Duty Cycle
50%
1
PART NUMBER
KA4A4M
KA4F4M
KA4L4M
KA4L3M
KA4L3N
KA4L3Z
KA4A3Q
KA4A4P
KA4F4N
MARK
A4
B4
C4
D4
E4
F4
G4
H4
X4
R
1
10.0
22.0
47.0
4.7
4.7
4.7
1.0
10.0
22.0
R
2
10.0
22.0
47.0
4.7
10.0
UNIT
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
PART NUMBER
KA4L4L
KA4A4Z
KA4F4Z
KA4L4Z
KA4F3M
KA4F3P
KA4F3R
KA4A4L
KA4L4K
MARK
K4
Y4
Z4
N4
P4
Q4
R4
S4
T4
R
1
47.0
10.0
22.0
47.0
2.2
2.2
2.2
10.0
47.0
R
2
22.0
UNIT
kΩ
kΩ
kΩ
kΩ
2.2
10.0
47.0
4.7
10.0
kΩ
kΩ
kΩ
kΩ
kΩ
10.0
47.0
47.0
kΩ
kΩ
kΩ
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16495EJ3V0DS00 (3rd edition)
Date Published October 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
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