KBP210 datasheet, PDF - EEWORLD Datasheet

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KBP210: Description2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size19KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]; Environmental Compliance

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KBP210 Overview

2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

KBP210 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	EIC [EIC discrete Semiconductors]
Reach Compliance Code	compli
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	60 A
Number of components	4
Maximum output current	2 A
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO

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KBP200 - KBP210

PRV : 50 - 1000 Volts

Io : 2.0 Amperes

FEATURES :

High case dielectric strength

High surge current capability

High reliability

Low reverse current

Low forward voltage drop

Ideal for printed circuit board

SILICON BRIDGE RECTIFIERS

KBP

0.71 (18.0)

0.63 (16.0)

0.825 (20.95)

0.605 (15.36)

AC AC

0.035 (0.89)

0.028 (0.71)

0.500 (12.7)

MIN.

0.16 (4.00)

0.14 (3.55)

0.276 (7.01 )

0.236 (5.99)

MECHANICAL DATA :

* Case : Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

* Weight : 3.4 grams

0.105 (2.66)

0.085 (2.16)

Dimensions in inches and ( millimeter )

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RATING

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current Tc = 50

Peak Forward Surge Current, Single half sine wave

Superimposed on rated load (JEDEC Method)

Rating for fusing

( t < 8.3 ms. )

Ta = 25

Ta = 100

SYMBOL

RRM

RMS

F(AV)

KBP

200

KBP

201

100

KBP

202

200

140

200

KBP

204

400

280

400

2.0

KBP

206

600

420

600

KBP

208

800

560

800

KBP

210

1000

700

1000

UNIT

Volts

Amps.

FSM

1.0

- 50 to + 125

Amps.

Volts

R(H)

Maximum Forward Voltage per Diode at I

= 1.0 Amp.

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Junction Capacitance per Diode (Note 1)

Typical Thermal Resistance (Note 2)

Operating Junction Temperature Range

Storage Temperature Range

Notes :

RθJA

STG

C/W

1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.

2 ) Thermal resistance from Junction to Ambient with units mounted on a 0.47" X 0.47" ( 12mm X 12mm ) Cu. Pads.

UPDATE : MARCH 6, 2000

KBP210 Related Products

	KBP210	KBP208	KBP206	KBP204	KBP202	KBP201	KBP200
Description	2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER,1-PHASE FULL-WAVE,800V V(RRM),BR-7W	2 A, SILICON, BRIDGE RECTIFIER DIODE	2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V	1 V	1 V	1 V	1 V
Maximum non-repetitive peak forward current	60 A	60 A	60 A	60 A	60 A	50 A	60 A
Number of components	4	4	4	4	4	4	4
Maximum output current	2 A	2 A	2 A	2 A	2 A	2 A	2 A
Maximum repetitive peak reverse voltage	1000 V	800 V	600 V	400 V	200 V	100 V	50 V
surface mount	NO	NO	NO	NO	NO	NO	NO
Maker	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	-
Maximum operating temperature	-	125 °C	125 °C	150 °C	125 °C	125 °C	125 °C

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