KBU1000 datasheet, PDF - EEWORLD Datasheet

KBU1000: Description10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size124KB，2 Pages; ManufacturerJGD（Jinan Gude Electronic Device）; Websitehttp://www.jgd.com.cn/

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KBU1000 Overview

10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

	KBU1000	KBU1010	KBU1008	KBU1006	KBU1004	KBU1002	KBU1001
Description	10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Maker	-	JGD（Jinan Gude Electronic Device）	-	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	-	JGD（Jinan Gude Electronic Device）
Reach Compliance Code	-	unknown	-	unknown	unknown	-	unknown
Configuration	-	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS
Diode type	-	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	-	1.1 V	-	1.1 V	1.1 V	-	1.1 V
Maximum non-repetitive peak forward current	-	250 A	-	250 A	250 A	-	250 A
Number of components	-	4	-	4	4	-	4
Maximum operating temperature	-	125 °C	-	125 °C	125 °C	-	125 °C
Maximum output current	-	10 A	-	10 A	10 A	-	10 A
Maximum repetitive peak reverse voltage	-	1000 V	-	600 V	400 V	-	100 V
surface mount	-	NO	-	NO	NO	-	NO

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