KBU1010 datasheet, PDF - EEWORLD Datasheet

KBU1010: Description10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size124KB，2 Pages; ManufacturerJGD（Jinan Gude Electronic Device）; Websitehttp://www.jgd.com.cn/

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10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

Parameter Name	Attribute value
Maker	JGD（Jinan Gude Electronic Device）
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	250 A
Number of components	4
Maximum operating temperature	125 °C
Maximum output current	10 A
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO

	KBU1010	KBU1008	KBU1006	KBU1004	KBU1002	KBU1001	KBU1000
Description	10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Maker	JGD（Jinan Gude Electronic Device）	-	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	-	JGD（Jinan Gude Electronic Device）	-
Reach Compliance Code	unknown	-	unknown	unknown	-	unknown	-
Configuration	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	-
Diode type	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE	-
Maximum forward voltage (VF)	1.1 V	-	1.1 V	1.1 V	-	1.1 V	-
Maximum non-repetitive peak forward current	250 A	-	250 A	250 A	-	250 A	-
Number of components	4	-	4	4	-	4	-
Maximum operating temperature	125 °C	-	125 °C	125 °C	-	125 °C	-
Maximum output current	10 A	-	10 A	10 A	-	10 A	-
Maximum repetitive peak reverse voltage	1000 V	-	600 V	400 V	-	100 V	-
surface mount	NO	-	NO	NO	-	NO	-

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