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Datasheet> All Categories > Discrete semiconductor> The transistor> KRA553U
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KRA553U

Description
EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
CategoryDiscrete semiconductor    The transistor   
File Size107KB，6 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
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KRA553U Overview

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRA553U Parametric

Parameter NameAttribute value
MakerKEC
package instructionSMALL OUTLINE, R-PDSO-G5
Contacts5
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-G5
Number of components2
Number of terminals5
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz

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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
A1
KRA551U~KRA556U
EPITAXIAL PLANAR PNP TRANSISTOR
B
B1
1
5
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
A
2
3
4
D
DIM
A
A1
B
B1
C
D
G
H
MILLIMETERS
_
2.00 + 0.20
_ 0.1
1.3 +
_
2.1 + 0.1
_
1.25 + 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 + 0.1
0.15+0.1/-0.05
C
C
H
EQUIVALENT CIRCUIT
OUT
R1
R2
BIAS RESISTOR VALUES
TYPE NO.
KRA551U
R1(k
4.7
10
22
47
2.2
4.7
)
R2(k
4.7
10
22
47
47
47
)
T
G
T
IN
KRA552U
KRA553U
KRA554U
COMMON(+)
1. Q
1
IN (BASE)
2. Q
1
, Q
2
COMMON (EMITTER)
3. Q
2
IN (BASE)
4. Q
2
OUT (COLLECTOR)
5. Q
1
OUT (COLLECTOR)
KRA555U
KRA556U
USV
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Q1
Q2
MAXIMUM RATING (Ta=25
Output Voltage
)
SYMBOL
KRA551U
556U
V
O
KRA551U
KRA552U
KRA553U
KRA554U
KRA555U
KRA556U
1
2
3
CHARACTERISTIC
RATING
-50
-20, 10
-30, 10
-40, 10
-40, 10
-12, 5
-20, 5
UNIT
V
Input Voltage
V
I
V
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
KRA551U
556U
I
O
P
D
*
T
j
T
stg
-100
200
150
-55
150
Type Name
5
4
mA
mW
Marking
KRA552U
PB
KRA553U
PC
KRA554U
PD
KRA555U
PE
KRA556U
PF
1
2
3
MARK SPEC
TYPE
MARK
KRA551U
PA
2002. 1. 24
Revision No : 2
1/6

KRA553U Related Products

KRA553U KRA555U KRA556U KRA554U KRA552U KRA551U
Description EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
Maker KEC KEC KEC KEC KEC KEC
package instruction SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 USV, 5 PIN SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5
Contacts 5 5 5 5 5 5
Reach Compliance Code unknow unknow unknown unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 21.36 BUILT-IN BIAS RESISTOR RATIO IS 10 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V
Configuration COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 70 80 80 80 50 30
JESD-30 code R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5
Number of components 2 2 2 2 2 2
Number of terminals 5 5 5 5 5 5
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz

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Shortcut:   00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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