Generral-Purpose Transistor Array
| Parameter Name | Attribute value |
| Maker | SANYO |
| Parts packaging code | DIP |
| package instruction | IN-LINE, R-PDIP-T16 |
| Contacts | 16 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.2 A |
| Collector-emitter maximum voltage | 35 V |
| Configuration | COMMON COLLECTOR, 7 ELEMENTS |
| Minimum DC current gain (hFE) | 70 |
| JESD-30 code | R-PDIP-T16 |
| Number of components | 7 |
| Number of terminals | 16 |
| Maximum operating temperature | 75 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 960 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| LB1215 | LB1217 | LB1216 | LB1213 | LB1214 | LB1211 | LB1212 | |
|---|---|---|---|---|---|---|---|
| Description | Generral-Purpose Transistor Array | Generral-Purpose Transistor Array | Generral-Purpose Transistor Array | Generral-Purpose Transistor Array | Generral-Purpose Transistor Array | Generral-Purpose Transistor Array | Generral-Purpose Transistor Array |
| Parts packaging code | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| package instruction | IN-LINE, R-PDIP-T16 | IN-LINE, R-PDIP-T16 | IN-LINE, R-PDIP-T16 | IN-LINE, R-PDIP-T16 | IN-LINE, R-PDIP-T16 | IN-LINE, R-PDIP-T16 | IN-LINE, R-PDIP-T16 |
| Contacts | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
| Reach Compliance Code | unknow | unknown | unknow | unknow | unknow | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
| Collector-emitter maximum voltage | 35 V | 35 V | 35 V | 35 V | 35 V | 35 V | 35 V |
| Configuration | COMMON COLLECTOR, 7 ELEMENTS | SEPARATE, 5 ELEMENTS | COMMON COLLECTOR, 7 ELEMENTS WITH BUILT-IN RESISTOR | COMMON EMITTER, 7 ELEMENTS WITH BUILT-IN RESISTOR | COMMON EMITTER, 7 ELEMENTS WITH BUILT-IN RESISTOR | COMMON EMITTER, 7 ELEMENTS | COMMON EMITTER, 7 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| Minimum DC current gain (hFE) | 70 | 70 | 70 | 50 | 50 | 70 | 50 |
| JESD-30 code | R-PDIP-T16 | R-PDIP-T16 | R-PDIP-T16 | R-PDIP-T16 | R-PDIP-T16 | R-PDIP-T16 | R-PDIP-T16 |
| Number of components | 7 | 5 | 7 | 7 | 7 | 7 | 7 |
| Number of terminals | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
| Maximum operating temperature | 75 °C | 75 °C | 75 °C | 75 °C | 75 °C | 75 °C | 75 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 960 W | 960 W | 960 W | 960 W | 960 W | 960 W | 960 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maker | SANYO | SANYO | SANYO | SANYO | - | SANYO | SANYO |
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