|
PMMT591A215 |
PMMT591A235 |
Description |
Bipolar Transistors - BJT TRANS BISS TAPE-7 |
Bipolar Transistors - BJT TRANS BISS TAPE-11 |
Product Attribute |
Attribute Value |
Attribute Value |
Manufacturer |
NXP |
NXP |
Product Category |
Bipolar Transistors - BJT |
Bipolar Transistors - BJT |
RoHS |
Details |
Details |
Mounting Style |
SMD/SMT |
SMD/SMT |
Package / Case |
SOT-23-3 |
SOT-23-3 |
Transistor Polarity |
PNP |
PNP |
Configuration |
Single |
Single |
Collector- Emitter Voltage VCEO Max |
40 V |
40 V |
Collector- Base Voltage VCBO |
40 V |
40 V |
Emitter- Base Voltage VEBO |
5 V |
5 V |
Maximum DC Collector Current |
1 A |
1 A |
Gain Bandwidth Product fT |
150 MHz |
150 MHz |
Maximum Operating Temperature |
+ 150 C |
+ 150 C |
DC Current Gain hFE Max |
300 at 1 mA at 5 V |
300 at 1 mA at 5 V |
Height |
1 mm |
1 mm |
Length |
3 mm |
3 mm |
Width |
1.4 mm |
1.4 mm |
DC Collector/Base Gain hfe Min |
300 at 1 mA at 5 V, 300 at 100 mA at 5 V, 250 at 500 mA at 5 V, 160 at 1 A at 5 V |
300 at 1 mA at 5 V, 300 at 100 mA at 5 V, 250 at 500 mA at 5 V, 160 at 1 A at 5 V |
Minimum Operating Temperature |
- 65 C |
- 65 C |
Pd - Power Dissipation |
250 mW |
250 mW |
Factory Pack Quantity |
3000 |
10000 |
Unit Weight |
0.000282 oz |
0.000282 oz |
Packaging |
Reel |
Reel |