PSMN1R3-30YL
N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
Rev. 02 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power convertors
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
T
j
Quick reference
Conditions
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1;
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
-55
V
GS
= 10 V; T
j(init)
= 25 °C;
I
D
= 100 A; V
sup
≤
30 V;
R
GS
= 50
Ω;
unclamped
V
GS
= 4.5 V; I
D
= 25 A;
V
DS
= 12 V; see
Figure 13;
see
Figure 14
-
Typ
-
-
-
-
-
Max
30
100
121
150
383
Unit
V
A
W
°C
mJ
drain-source voltage T
j
≥
25 °C; T
j
≤
150 °C
drain current
total power
dissipation
junction temperature
Symbol Parameter
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
Q
GD
Q
G(tot)
gate-drain charge
total gate charge
-
-
9.3
46.6
-
-
nC
nC
NXP Semiconductors
PSMN1R3-30YL
N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
Quick reference
…continued
Conditions
V
GS
= 10 V; I
D
= 15 A;
T
j
= 100 °C; see
Figure 12
V
GS
= 10 V; I
D
= 15 A;
T
j
= 25 °C; see
Figure 17
Min
-
-
Typ
-
1.04
Max
1.8
1.3
Unit
mΩ
mΩ
Table 1.
Symbol Parameter
Static characteristics
R
DSon
drain-source
on-state resistance
[1]
Continuous current is limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
S
S
S
G
D
Pinning information
Symbol
Description
source
source
source
gate
mounting base; connected to
drain
1
2
3
4
mbb076
Simplified outline
Graphic symbol
D
G
S
SOT1023
(LFPAK2)
3. Ordering information
Table 3.
Ordering information
Package
Name
PSMN1R3-30YL
LFPAK2
Description
Plastic single-ende surface-mounted package (LFPAK2); 4 leads
Version
SOT1023
Type number
PSMN1R3-30YL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 25 June 2009
2 of 14
NXP Semiconductors
PSMN1R3-30YL
N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
T
sld(M)
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering
temperature
source current
peak source current
T
mb
= 25 °C;
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
[1]
V
GS
= 10 V; T
mb
= 100 °C; see
Figure 1
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
t
p
≤
10 µs; pulsed; T
mb
= 25 °C; see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
[1]
Conditions
T
j
≥
25 °C; T
j
≤
150 °C
T
j
≥
25 °C; T
j
≤
150 °C; R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
Max
30
30
20
100
100
923
121
150
150
260
Unit
V
V
V
A
A
A
W
°C
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
I
S
I
SM
E
DS(AL)S
-
-
-
100
923
383
A
A
mJ
Avalanche ruggedness
non-repetitive
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A; V
sup
≤
30 V;
drain-source avalanche R
GS
= 50
Ω;
unclamped
energy
[1]
Continuous current is limited by package.
250
I
D
(A)
200
003aad141
120
P
der
(%)
80
03aa15
150
100
40
50
0
0
50
100
150
200
T
mb
(°C)
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain currnet as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
PSMN1R3-30YL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 25 June 2009
3 of 14
NXP Semiconductors
PSMN1R3-30YL
N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
10
4
I
D
(A)
10
3
003aad145
Limit R
DSon
= V
DS
/ I
D
t
p
= 10 us
10
2
100 us
10
DC
1 ms
10 ms
100 ms
1
10
-1
10
-1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN1R3-30YL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 25 June 2009
4 of 14
NXP Semiconductors
PSMN1R3-30YL
N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see
Figure 4
Min
-
Typ
0.4
Max
1.03
Unit
K/W
1
Z
th (j-mb)
(K/W)
10
-1
δ
= 0.5
0.2
0.1
0.05
10
-2
0.02
P
003aad142
δ
=
t
p
T
10
-3
single shot
t
p
T
t
10
-4
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN1R3-30YL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 25 June 2009
5 of 14
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