Standard SRAM, 512KX8, 25ns, CMOS, CDIP32, CERAMIC, DIP-32
Parameter Name | Attribute value |
package instruction | CERAMIC, DIP-32 |
Reach Compliance Code | unknown |
Maximum access time | 25 ns |
I/O type | COMMON |
JESD-30 code | R-GDIP-T32 |
JESD-609 code | e0 |
memory density | 4194304 bit |
Memory IC Type | STANDARD SRAM |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 32 |
word count | 524288 words |
character code | 512000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 512KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC, GLASS-SEALED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP32,.6 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
power supply | 5 V |
Certification status | Not Qualified |
Filter level | MIL-STD-883 |
Maximum standby current | 0.002 A |
Minimum standby current | 2 V |
Maximum slew rate | 0.225 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | TIN LEAD |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Base Number Matches | 1 |