XT2108-801 datasheet, PDF - EEWORLD Datasheet

XT2108-801: DescriptionSilicon Controlled Rectifier, 25000mA I(T), 800V V(DRM); CategoryAnalog mixed-signal IC Trigger device; File Size372KB，4 Pages; ManufacturerMarconi Circuit Technology Inc

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XT2108-801 Overview

Silicon Controlled Rectifier, 25000mA I(T), 800V V(DRM)

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Nominal circuit commutation break time	60 µs
Critical rise rate of minimum off-state voltage	300 V/us
Maximum DC gate trigger current	100 mA
Maximum DC gate trigger voltage	3 V
Maximum leakage current	10 mA
On-state non-repetitive peak current	370 A
Maximum on-state voltage	2 V
Maximum on-state current	25000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	800 V
surface mount	NO
Trigger device type	SCR
Base Number Matches	1

	XT2108-801	XT2108-1001
Description	Silicon Controlled Rectifier, 25000mA I(T), 800V V(DRM)	Silicon Controlled Rectifier, 25000mA I(T), 1000V V(DRM)
Reach Compliance Code	unknown	unknow
Nominal circuit commutation break time	60 µs	60 µs
Critical rise rate of minimum off-state voltage	300 V/us	300 V/us
Maximum DC gate trigger current	100 mA	100 mA
Maximum DC gate trigger voltage	3 V	3 V
Maximum leakage current	10 mA	10 mA
On-state non-repetitive peak current	370 A	370 A
Maximum on-state voltage	2 V	2 V
Maximum on-state current	25000 A	25000 A
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C
Off-state repetitive peak voltage	800 V	1000 V
surface mount	NO	NO
Trigger device type	SCR	SCR

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