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209A542-131

Description
SRAM Module, 128KX16, 30ns, CMOS, CDFP40, 0.855 X 0.710 INCH, CERAMIC, DFP-40
Categorystorage    storage   
File Size361KB,12 Pages
ManufacturerBAE Systems
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209A542-131 Overview

SRAM Module, 128KX16, 30ns, CMOS, CDFP40, 0.855 X 0.710 INCH, CERAMIC, DFP-40

209A542-131 Parametric

Parameter NameAttribute value
Parts packaging codeDFP
package instructionDFP,
Contacts40
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time30 ns
JESD-30 codeR-CDFP-F40
memory density2097152 bit
Memory IC TypeSRAM MODULE
memory width16
Number of functions1
Number of terminals40
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX16
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDFP
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter levelMIL-PRF-38535 Class V
Maximum supply voltage (Vsup)3.46 V
Minimum supply voltage (Vsup)3.14 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formFLAT
Terminal locationDUAL
total dose1M Rad(Si) V
Base Number Matches1

209A542-131 Related Products

209A542-131 209A542-135 209A542-145 209A542-144 209A542-133 209A542-143 209A542-147 209A542-134 209A542-137 209A542-141
Description SRAM Module, 128KX16, 30ns, CMOS, CDFP40, 0.855 X 0.710 INCH, CERAMIC, DFP-40 SRAM Module, 128KX16, 30ns, CMOS, CDFP40, 0.855 X 0.710 INCH, CERAMIC, DFP-40 SRAM Module, 128KX16, 30ns, CMOS, CDFP40, 0.855 X 0.710 INCH, CERAMIC, DFP-40 SRAM Module, 128KX16, 30ns, CMOS, CDFP40, 0.855 X 0.710 INCH, CERAMIC, DFP-40 SRAM Module, 128KX16, 30ns, CMOS, CDFP40, 0.855 X 0.710 INCH, CERAMIC, DFP-40 SRAM Module, 128KX16, 30ns, CMOS, CDFP40, 0.855 X 0.710 INCH, CERAMIC, DFP-40 SRAM Module, 128KX16, 30ns, CMOS, CDFP40, 0.855 X 0.710 INCH, CERAMIC, DFP-40 SRAM Module, 128KX16, 30ns, CMOS, CDFP40, 0.855 X 0.710 INCH, CERAMIC, DFP-40 SRAM Module, 128KX16, 30ns, CMOS, CDFP40, 0.855 X 0.710 INCH, CERAMIC, DFP-40 SRAM Module, 128KX16, 30ns, CMOS, CDFP40, 0.855 X 0.710 INCH, CERAMIC, DFP-40
Parts packaging code DFP DFP DFP DFP DFP DFP DFP DFP DFP DFP
package instruction DFP, DFP, DFP, DFP, DFP, DFP, DFP, DFP, DFP, DFP,
Contacts 40 40 40 40 40 40 40 40 40 40
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
Maximum access time 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns
JESD-30 code R-CDFP-F40 R-CDFP-F40 R-CDFP-F40 R-CDFP-F40 R-CDFP-F40 R-CDFP-F40 R-CDFP-F40 R-CDFP-F40 R-CDFP-F40 R-CDFP-F40
memory density 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit
Memory IC Type SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE
memory width 16 16 16 16 16 16 16 16 16 16
Number of functions 1 1 1 1 1 1 1 1 1 1
Number of terminals 40 40 40 40 40 40 40 40 40 40
word count 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000 128000 128000 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
organize 128KX16 128KX16 128KX16 128KX16 128KX16 128KX16 128KX16 128KX16 128KX16 128KX16
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code DFP DFP DFP DFP DFP DFP DFP DFP DFP DFP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum supply voltage (Vsup) 3.46 V 3.46 V 3.46 V 3.46 V 3.46 V 3.46 V 3.46 V 3.46 V 3.46 V 3.46 V
Minimum supply voltage (Vsup) 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Base Number Matches 1 1 1 1 1 1 1 1 1 1
Filter level MIL-PRF-38535 Class V MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q - - - MIL-PRF-38535 Class Q - MIL-PRF-38535 Class V
total dose 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V - - - 1M Rad(Si) V - 1M Rad(Si) V

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