225A837-131 datasheet, PDF - EEWORLD Datasheet

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225A837-131: DescriptionSRAM Module, 256KX8, 30ns, CMOS, CDMA40, 0.855 X 0.710 INCH, CERAMIC, FP-40; Categorystorage storage; File Size396KB，12 Pages; ManufacturerBAE Systems

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225A837-131 Overview

SRAM Module, 256KX8, 30ns, CMOS, CDMA40, 0.855 X 0.710 INCH, CERAMIC, FP-40

225A837-131 Parametric

Parameter Name	Attribute value
Parts packaging code	DMA
package instruction	,
Contacts	40
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	30 ns
JESD-30 code	R-CDMA-F40
memory density	2097152 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of terminals	40
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class V
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal location	DUAL
total dose	1M Rad(Si) V
Base Number Matches	1

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256K x 8

Radiation Hardened

Static RAM MCM – 5 V

Features

201A072

225A837

Product Description

Other

• Read/Write Cycle Times

≤

30 ns (-55°C to 125°C)

• SMD Number 5962H99541

• Asynchronous Operation

• CMOS or TTL Compatible I/O

• Single 5 V ±10% Power Supply

• Low Operating Power

• Packaging Options

• 40-Lead Dual Flat Pack (0.855” x 0.710”)

Radiation

• Fabricated with Bulk CMOS 0.5 µm Process

• Total Dose Hardness through 1x10

rad(Si)

• Neutron Hardness through 1x10

N/cm

• Dynamic and Static Transient Upset Hardness

through 1x10

rad(Si)/s

• Soft Error Rate of < 1x10

-11

Upsets/Bit-Day

• Dose Rate Survivability through 1x10

rad(Si)/s

• Latchup Free

General Description

The 256K x 8 radiation hardened static RAM is

composed of two 128K x 8 SRAM memory die

assembled in a single, double-sided ceramic

substrate. Each die is a high performance

131,072 word x 8-bit static random access

memory with industry-standard functionality. It

is fabricated with BAE SYSTEMS’ radiation

hardened technology and is designed for use in

systems operating in radiation environments.

The RAM operates over the full military

temperature range and requires a single 5 V

±10% power supply. The RAM is available with

either TTL or CMOS compatible I/O. Power

consumption is typically less than 40 mW/MHz

in operation, and less than 20 mW in the low

power disabled mode. The RAM read operation

is fully asynchronous, with an associated

typical access time of 19 nanoseconds.

BAE SYSTEMS’ enhanced bulk CMOS

technology is radiation hardened through the

use of advanced and proprietary design, layout,

and process hardening techniques.

BAE SYSTEMS • 9300 Wellington Road • Manassas, Virginia 20110-4122

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