2N6561 datasheet, PDF - EEWORLD Datasheet

2N6561: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size348KB，2 Pages; ManufacturerGeneral Transistor Corp

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Transistor

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	10 A
Configuration	Single
Minimum DC current gain (hFE)	10
Maximum operating temperature	200 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	125 W
surface mount	NO
Nominal transition frequency (fT)	15 MHz
Base Number Matches	1

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