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2N5597

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size327KB,3 Pages
ManufacturerSilicon Transistor Corp.oration
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Transistor

2N5597 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)2 A
ConfigurationSingle
Minimum DC current gain (hFE)70
JESD-609 codee0
Maximum operating temperature175 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)20 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)60 MHz
Base Number Matches1

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