2N3993 datasheet, PDF - EEWORLD Datasheet

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2N3993: DescriptionSmall Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-72; CategoryDiscrete semiconductor The transistor; File Size1MB，68 Pages; ManufacturerInterFET; Websitehttp://www.interfet.com/

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2N3993 Overview

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-72

2N3993 Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	unknown
Configuration	SINGLE
Maximum drain-source on-resistance	150 Ω
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	4.5 pF
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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01/99

B-3

2N3821, 2N3822

N-Channel Silicon Junction Field-Effect Transistor

¥ VHF Amplifiers

¥ Small Signal Amplifiers

Absolute maximum ratings at T

= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage

Continuous Forward Gate Current

Continuous Device Power Dissipation

Power Derating

– 50 V

10 mA

300 mW

2mW/°C

At 25°C free air temperature:

Static Electrical Characteristics

Gate Source Breakdown Voltage

Gate Reverse Current

(BR)GSS

GSS

2N3821

Min

– 50

– 0.1

– 0.5

–2

Max

2N3822

Min

– 50

– 0.1

–1

–4

–6

Max

Unit

µA

Process NJ32

Test Conditions

= – 1 µA, V

= ØV

= – 30V, V

= ØV

= – 30V, V

= ØV

= 15V, I

= 50 µA

= 15V, I

= 200 µA

= 15V, I

= 400 µA

= 15V, I

= 0.5 nA

= 15V, V

= ØV

= 15V, V

= – 8V

= 15V, V

= – 8V

= 150°C

Gate Source Voltage

Gate Source Cutoff Voltage

Drain Saturation Current (Pulsed)

Drain Cutoff Current

Dynamic Electrical Characteristics

Drain Source ON Resistance

Common Source

Forward Transconductance

Common Source

Forward Transmittance

Common Source Output Conductance

Common Source Input Capacitance

Common Source

Reverse Transfer Capacitance

Equivalent Short Circuit

Input Noise Voltage

Noise Figure

GS(OFF)

DSS

D(OFF)

0.5

–4

2.5

ds(on)

| Y

iss

rss

1500 4500 3000 6500

1500

200

3000

Ω

µS

= ØV, I

= Ø V

= 15V, V

= ØV

= 15V, V

= ØV

= 15V, V

= ØV

= 15V, V

= ØV

= 15V, V

= ØV

= 15V, V

= ØV

= 15V, V

= ØV

= 1 MΩ

f = 1 kHz

f = 100 MHz

f = 1 kHz

f = 1 MHz

f = 10 Hz

200 nV/√Hz

TOÐ72 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Case

www.interfet.com

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287

FAX

(972) 276-3375

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