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2SC2714

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size456KB,7 Pages
ManufacturerShandong Yiguang Electronic Joint Stock Co., Ltd.
Download Datasheet Parametric View All

2SC2714 Overview

Transistor

2SC2714 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
2SC2714
NPN EPITAXIAL SILICON TRANSISTO
R
Package:
SOT-23
TECHNICAL DATA
HIGH FREQUENCY AMPLIFIER APPLICATIONS
AM/FM ,RF,MIX,IF AMPLIFIER APPLICATIONS
*
High Current Gain Bandwidth Product f
T
=550MHz
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
Rating
40
30
4
20
225
150
-55-150
Unit
V
V
V
mA
mW
PIN:
STYLE
NO.1
B
E
C
1
2
3
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Reverse Transfer Capacitance
Noise figure
Current Gain-Bandwidth Product
Symbol
BVcbo
BVceo
BVebo
Icbo
Iebo
Hfe
Cre
NF
f
T
40
0.7
2.5
550
5.0
Min
40
30
4
500
500
200
PF
db
MHz
Typ
Max
Unit
V
V
V
nA
nA
Test Conditions
Ic=100uA
Ie=0
Ic= 1mA Ib=0
Ie= 100uA
Vcb= 18V
Veb= 4V
Ic=0
Ie=0
Ic= 0
Vce= 6V Ic= 1mA
Vcb=6V Ie=0 f=1MHZ
Vce= 6V Ie= -1mA
f=100MHz
Vce= 6V Ic= 1mA
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width
≤300uS,Duty
cycle
≤2%
DEVICE MARKING:
2SC2714=QY
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