ISTS802, ISTS802A, ISTS802B, ISTS802C
0.5mm APERTURE OPTO-ELECTRONIC SINGLE
CHANNEL WIDE GAP SLOTTED INTERRUPTER
SWITCHES WITH TRANSISTOR SENSORS
DESCRIPTION
3.3
The ISTS802 series of opaque photointerrupters
DIA
are single channel switches consisting of a
1
Gallium Arsenide infrared emitting diode and a
NPN silicon photo transistor mounted in a
2
polycarbonate housing. The package is designed
to optimise the mechanical resolution, coupling
efficiency, ambient light rejection, cost and
11.3
reliability. Operating on the principle that objects
10.9
opaque to infrared will interrupt the transmission
of light between an infrared emitting diode and a
photo sensor switching the output from an "ON"
state to an "OFF" state.
FEATURES
l
High Sensing Accuracy Aperture - 0.5mm
l
5mm Gap between LED and Detector
l
Also available with flying leads, with or
without connector, supplied as required
APPLICATIONS
l
Copiers, Printers, Facsimilies, Record
Players, Casette Decks, Optoelectronic
Switches, VCR's
1
4
20.2
17.2
+
E
Dimensions in mm
4
0.5
3
5.0
8.3
7.9
6.6
3.3
3.0
2.8
3.3
3.0
OPTICAL
CENTRE
LINE
2.54
3.3
DIA
6.6
14.2
0.45
0.40
10.16
26.2
ISTS802A
1
0.5
2
8.3
7.9
20.2
+
E
4
14.2
5.0
3
3.3
3.0
2.8
11.3
10.9
2
20.2
1
0.5
2
8.3
7.9
+
E
3
0.45
0.40
3.3
3.0
OPTICAL
CENTRE
LINE
2.54
ISTS802B
4
17.2
6.6
3
5.0
11.3
10.9
3.3
3.0
2.8
3.3
3.0
OPTICAL
CENTRE
LINE
2.54
3.3
DIA
1
0.5
2
8.3
7.9
10.16
+
E
4
6.6
14.2
3
5.0
11.3
10.9
OPTICAL
CENTRE
LINE
2.54
3.3
3.0
2.8
14.2
0.45
0.40
0.45
0.40
ISTS802
10.16
ISTS802C
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
24/9/97
ISOCOM INC
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Tel: (972) 423-5521
Fax: (972) 422-4549
DB91084-AAS/A1
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-40°C to + 85°C
Operating Temperature
-25°C to + 85°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Collector Current I
C
Power Dissipation
30V
5V
20mA
75mW
50mA
5V
75mW
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
( Note 1 )
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
MIN TYP MAX UNITS
1.0
3
1.15
1.3
10
30
5
100
V
V
µA
V
V
nA
TEST CONDITION
I
F
= 10mA
I
R
= 10µA
V
R
= 3V
I
C
= 1mA
I
E
= 100µA
V
CE
= 24V
Output
Coupled
Current Transfer Ratio ( CTR )
( Note 1 )
2
%
20mA I
F
, 5V V
CE
Collector-emitter Saturation VoltageV
CE(SAT)
Output Rise Time
Output Fall Time
Note 1
tr
tf
6
6
0.4
V
µs
µs
20mA I
F
, 200µA I
C
V
CE
= 5V ,
I
C
= 2mA,R
L
= 100Ω
Special Selections are available on request. Please consult the factory.
24/9/97
DB91084-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
100
Collector power dissipation P
C
(mW)
Normalized output current
10
4
2
1
0.4
0.2
0.1
0.04
0.02
0.01
0.1
Normalized Output Current vs.
Collector-emitter Voltage
I
F
= 30mA
20mA
10mA
5mA
Normalized to
I
F
= 20mA
V
CE
= 5V
Pulsed
PW = 100µs
PRR = 100pps
10
100
75
50
25
T
A
= 25°C
1
0
-25
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
Normalized output current
50
Forward current I
F
(mA)
40
30
20
10
0
-25
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter saturation voltage V
CE(SAT)
(V)
Normalized Output Current
vs. Ambient Temperature
1.5
Normalized output current
Collector-emitter voltage V
CE
( V )
Normalized Output Current vs.
Forward Current
Normalized to
I
F
= 20mA
V
CE
= 0.4V
Pulsed
PW = 100µs
PRR = 100pps
T
A
= 25°C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
2
5
10
20
50
Forward current I
F
(mA)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
-25
0
25
50
75
100
Ambient temperature T
A
( °C )
DB91084-AAS/A1
I
F
= 20mA
V
CE
= 5V
I
F
= 20mA
I
C
= 200µA
1.0
0.5
0
-25
0
25
50
75
100
Ambient temperature T
A
( °C )
24/9/97
GD32 MCU
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