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1SS421(TH3PSE,F)

Description
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size159KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

1SS421(TH3PSE,F) Overview

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon

1SS421(TH3PSE,F) Parametric

Parameter NameAttribute value
package instructionR-PDSO-F2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.15 W
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
1SS421
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
1SS421
High-Speed Switching Application
Low forward voltage: V
F (3)
= 0.50V (max)
Unit: mm
Abusolute Maximum Ratings
(Ta = 25°C)
Characteristics
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Symbol
V
R
I
FM
I
O
I
FSM
P*
T
j
T
stg
T
opr
Rating
30
300
200
1
150
125
−55
to 125
−40
to 100
Unit
V
mA
mA
A
mW
°C
°C
°C
*:
Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
Cu pad dimension of 4 mm × 4 mm.
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-1G1A
reliability significantly even if the operating conditions (i.e. operating Weight: 1.4 mg (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
I
R (1)
I
R (2)
C
T
Test
Circuit
Test Condition
I
F
= 1 mA
I
F
= 5 mA
I
F
= 200 mA
V
R
= 10 V
V
R
= 30 V
V
R
= 0, f = 1 MHz
Min
Typ.
0.18
0.22
0.44
19
Max
0.5
20
30
μA
pF
V
Unit
Equivalent Circuit
(top view)
Marking
S7
Start of commercial production
2006-01
1
2014-03-01

1SS421(TH3PSE,F) Related Products

1SS421(TH3PSE,F) 1SS421(TL3,F,T) 1SS421(TL3FT)
Description Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon schottky diodes & rectifiers 30v 200ma Rectifier Diode
Reach Compliance Code unknow - unknown
Diode type RECTIFIER DIODE - RECTIFIER DIODE
Base Number Matches 1 - 1
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