5962-8961405QXA datasheet, PDF

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5962-8961405QXA: DescriptionUVPROM, 128KX8, 150ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32; Categorystorage storage; File Size131KB，11 Pages; ManufacturerMicross; Websitehttps://www.micross.com

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5962-8961405QXA Overview

UVPROM, 128KX8, 150ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32

5962-8961405QXA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Micross
Parts packaging code	DIP
package instruction	WDIP, DIP32,.6
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	150 ns
I/O type	COMMON
JESD-30 code	R-CDIP-T32
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	UVPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	WDIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	IN-LINE, WINDOW
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class Q
Maximum seat height	7.493 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.06 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb) - hot dipped
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15.24 mm
Base Number Matches	1

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UVEPROM

Austin Semiconductor, Inc.

1 MEG UVEPROM

UV Erasable Programmable

Read-Only Memory

AVAILABLE AS MILITARY

SPECIFICATIONS

• SMD 5962-89614

• MIL-STD-883

SMJ27C010A

PIN ASSIGNMENT

(Top View)

32-Pin DIP (J)

(600 MIL)

A16

A15

A12

DQ0

DQ1

DQ2

GND

Vcc

PGM\

A14

A13

A11

A10

DQ7

DQ6

DQ5

DQ4

DQ3

FEATURES

• Organized 131,072 x 8

• Single +5V ±10% power supply

• Operationally compatible with existing megabit EPROMs

• Industry standard 32-pin ceramic dual-in-line package

• All inputs/outputs fully TTL compatible

• 8-bit output for use in microprocessor-based systems

• Very high-speed SNAP! Pulse Programming

• Power-saving CMOS technology

• 3-state output buffers

• 400mV minimum DC noise immunity with standard

TTL loads

• Latchup immunity of 250 mA on all input and output pins

• No pullup resistors required

• Low power dissipation (Vcc = 5.5V)

PActive

- 165 mW Worst Case

PStandby

- 0.55 mW Worst Case (CMOS-input levels)

Pin Name

A0 - A18

DA0-DQ7

GND

PGM\

Function

Address Inputs

Inputs (programming)/Outputs

Chip Enable

Output Enable

Ground

Program

5V Supply

13V Power Supply*

*Only in program mode.

GENERAL DESCRIPTION

The SMJ27C010A series are 131072 by 8-bit (1048576-

bit), ultaviolet (UV) light erasable, electrically programmable

read-only memories (EPROMs).

These devices are fabricated using power-saving CMOS

technology for high speed and simple interface with MOS and

bipolar circuits. All inputs (including program data inputs)

can be driven by Series 54 TTL circuits without the use of

external pullup resistors. Each output can drive one Series 54

TTL circuit without external resistors.

The SMJ27C010A EPROM is offered in a ceramic

dual-in-line package (J suffix) designed for insertion in

mounting-hole rows on 15.2mm (600mil) centers.

These EPROMs operate from a single 5V supply (in the

read mode), and therefore, are ideal for use in

microprocessor-based systems. One other 13V supply is

needed for programming. All programming signals are TTL

level. These devices are programmable using the SNAP! Pulse

programming algorithm. The SNAP! Pulse programming

algorithm uses a V

of 13V and a V

of 6.5V for a nominal

programming time of thirteen seconds. For programming

outside the system, existing EPROM programmers can be

used. Locations can be programmed singly, in blocks, or at

random.

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

OPTIONS

• Timing

120ns access

150ns access

200ns access

• Package(s)

Ceramic DIP (600mils)

MARKING

-12

-15

-20

No. 114

• Operating Temperature Ranges

Military (-55

C to +125

For more products and information

please visit our web site at

www.austinsemiconductor.com

SMJ27C010A

Rev. 1.0 9/01

5962-8961405QXA Related Products

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Description	UVPROM, 128KX8, 150ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32	UVPROM, 128KX8, 120ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32	UVPROM, 128KX8, 200ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32	UVPROM, 128KX8, 120ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32	UVPROM, 128KX8, 200ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32	UVPROM, 128KX8, 150ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32
Maker	Micross	Micross	Micross	Micross	Micross	Micross
Parts packaging code	DIP	DIP	DIP	DIP	DIP	DIP
package instruction	WDIP, DIP32,.6	WDIP, DIP32,.6	WDIP, DIP32,.6	WDIP,	WDIP,	WDIP,
Contacts	32	32	32	32	32	32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	150 ns	120 ns	200 ns	120 ns	200 ns	150 ns
JESD-30 code	R-CDIP-T32	R-CDIP-T32	R-CDIP-T32	R-CDIP-T32	R-CDIP-T32	R-CDIP-T32
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	UVPROM	UVPROM	UVPROM	UVPROM	UVPROM	UVPROM
memory width	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32
word count	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	WDIP	WDIP	WDIP	WDIP	WDIP	WDIP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE, WINDOW	IN-LINE, WINDOW	IN-LINE, WINDOW	IN-LINE, WINDOW	IN-LINE, WINDOW	IN-LINE, WINDOW
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q
Maximum seat height	7.493 mm	7.493 mm	7.493 mm	7.493 mm	7.493 mm	7.493 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	15.24 mm	15.24 mm	15.24 mm	15.24 mm	15.24 mm	15.24 mm
Base Number Matches	1	1	1	1	1	1

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