PD-94604B
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level R
DS(on)
IRHNA597064 100K Rads (Si) 0.016Ω
IRHNA593064
300K Rads (Si)
0.016Ω
I
D
-56A*
-56A*
IRHNA597064
60V, P-CHANNEL
5
TECHNOLOGY
SMD-2
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
-56*
-56
-224
250
2.0
±20
725
-56
25
2.1
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
3.3 (Typical)
g
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1
11/01/04
IRHNA597064
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-60
—
—
-2.0
40
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
-0.064
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.0
—
—
0.016
-4.0
—
-10
-25
-100
100
200
65
60
30
100
100
100
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -56A
Ã
VDS = VGS, ID = -1.0mA
VDS = -25V, IDS = -56A
Ã
VDS= -48V ,VGS=0V
VDS = -48V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -56A
VDS = -30V
VDD = -30V, ID = -56A,
VGS = -12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = -25V
f = 1.0MHz
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
7022
2897
267
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-56*
-224
-5.0
200
500
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = -56A, VGS = 0V
Ã
Tj = 25°C, IF =-56A, di/dt
≤
-100A/µs
VDD
≤
-25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
—
—
—
1.6
0.5
—
°C/W
Test Conditions
soldered to a 2 square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNA597064
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source
Ã
On-State Resistance (SMD-2)
Diode Forward Voltage
Ã
100K Rads(Si)
1
Min
Max
-60
-2.0
—
—
—
—
—
—
—
-4.0
-100
100
-10
0.016
0.016
-5.0
300KRads(Si)
2
Min
Max
-60
-2.0
—
—
—
—
—
—
—
-5.0
-100
100
-10
0.016
0.016
-5.0
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
=-20V
V
GS
= 20 V
V
DS
= -48V, V
GS
=0V
V
GS
= -12V, I
D
= -56A
V
GS
= -12V, I
D
= -56A
V
GS
= 0V, IS = -56A
1. Part number IRHNA597064
2. Part number IRHNA593064
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm
2
))
37.3
59.9
82.3
Energy
(MeV)
285
345
357
VDS (V)
Range
(µm)
@VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
36.8
- 60
- 60
- 60
- 60
- 60
32.7
- 60
- 60
- 60
- 45
- 25
28.5
- 60
- 60
- 60
—
—
-70
-60
-50
-40
-30
-20
-10
0
0
5
10
VGS
15
20
Br
I
Au
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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VDS
3
IRHNA597064
Pre-Irradiation
1000
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
1000
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
- 6.0V
BOTTOM -5.0V
TOP
-I D, Drain-to-Source Current (A)
100
-5.0V
-I D, Drain-to-Source Current (A)
100
-5.0V
20
µ
s PULSE WIDTH
Tj = 25°C
10
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
20
µ
s PULSE WIDTH
Tj = 150°C
10
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
-75A
I
D
=
-56A
-I D, Drain-to-Source Current (
Α
)
1.5
T J = 25°C
T J = 150°C
1.0
0.5
VDS = -25V
15
20
µ
s PULSE WIDTH
100
5
5.5
6
6.5
7
7.5
8
-V GS, Gate-to-Source Voltage (V)
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNA597064
12000
VGS = 0V, f = 1 MHZ
Ciss = C + Cgd, C SHORTED
gs
ds
16
-VGS, Gate-to-Source Voltage (V)
10000
Crss = C
gd
Coss = C + Cgd
ds
ID = -56A
12
VDS= -48V
VDS= -30V
C, Capacitance (pF)
8000
Ciss
Coss
6000
8
4000
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80
100 120 140 160
QG, Total Gate Charge (nC)
2000
Crss
0
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
-I SD , Reverse Drain Current (
Α
)
1000
T J = 150°C
100
-I D, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
T J = 25°C
100µs
1ms
10
1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1000
0.1
0.5
1.5
2.5
3.5
VGS = 0V
4.5
5.5
1
-V SD , Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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