BTS121A-E3045 datasheet, PDF - EEWORLD Datasheet

BTS121A-E3045: Description22A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size197KB，9 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BTS121A-E3045 Overview

22A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN

Parameter Name	Attribute value
Maker	SIEMENS
Parts packaging code	TO-220AB
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
Other features	LOGIC LEVEL COMPATIBLE
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	22 A
Maximum drain-source on-resistance	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	260 pF
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	95 W
Maximum pulsed drain current (IDM)	88 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	400 ns
Maximum opening time (tons)	210 ns
Base Number Matches	1

	BTS121A-E3045	BTS121AE3045
Description	22A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN	Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN
Maker	SIEMENS	SIEMENS
Parts packaging code	TO-220AB	TO-220AB
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	4
Reach Compliance Code	unknown	unknown
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (ID)	22 A	22 A
Maximum drain-source on-resistance	0.1 Ω	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	88 A	88 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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