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ISL6609CRZ-T

Description
4 A AND GATE BASED MOSFET DRIVER, PDSO8
Categorysemiconductor    Analog mixed-signal IC   
File Size1MB,12 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
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ISL6609CRZ-T Overview

4 A AND GATE BASED MOSFET DRIVER, PDSO8

ISL6609CRZ-T Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Minimum operating temperature0.0 Cel
Maximum operating temperature70 Cel
Processing package descriptionROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8
each_compliYes
EU RoHS regulationsYes
stateActive
Interface TypeAND GATE BASED MOSFET DRIVER
high end driverYES
jesd_30_codeR-PDSO-G8
jesd_609_codee3
moisture_sensitivity_level1
Rated output peak current limit4 A
Packaging MaterialsPLASTIC/EPOXY
ckage_codeSOP
ckage_equivalence_codeSOP8,.25
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_260
wer_supplies__v_5
qualification_statusCOMMERCIAL
seated_height_max1.75 mm
sub_categoryMOSFET Drivers
Rated supply voltage5 V
Minimum supply voltage4.5 V
Maximum supply voltage5.5 V
surface mountYES
Temperature levelCOMMERCIAL
terminal coatingMATTE TIN
Terminal formGULL WING
Terminal spacing1.27 mm
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_40
length4.9 mm
width3.9 mm
DATASHEET
ISL6609, ISL6609A
Synchronous Rectified MOSFET Driver
The ISL6609, ISL6609A is a high frequency, MOSFET driver
optimized to drive two N-Channel power MOSFETs in a
synchronous-rectified buck converter topology. This driver
combined with an Intersil ISL63xx or ISL65xx multiphase
PWM controller forms a complete single-stage core-voltage
regulator solution with high efficiency performance at high
switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V),
minimizing driver switching losses in high MOSFET gate
capacitance and high switching frequency applications.
Each driver is capable of driving a 3nF load with less than
10ns rise/fall time. Bootstrapping of the upper gate driver is
implemented via an internal low forward drop diode,
reducing implementation cost, complexity, and allowing the
use of higher performance, cost effective N-Channel
MOSFETs. Adaptive shoot-through protection is integrated
to prevent both MOSFETs from conducting simultaneously.
The ISL6609, ISL6609A features 4A typical sink current for
the lower gate driver, enhancing the lower MOSFET gate
hold-down capability during PHASE node rising edge,
preventing power loss caused by the self turn-on of the lower
MOSFET due to the high dV/dt of the switching node.
The ISL6609, ISL6609A also features an input that
recognizes a high-impedance state, working together with
Intersil multiphase PWM controllers to prevent negative
transients on the controlled output voltage when operation is
suspended. This feature eliminates the need for the schottky
diode that may be utilized in a power system to protect the
load from negative output voltage damage. In addition, the
ISL6609A’s bootstrap function is designed to prevent the
BOOT capacitor from overcharging, should excessively large
negative swings occur at the transitions of the PHASE node.
FN9221
Rev 2.00
April 27, 2009
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• 0.4 On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency
- Fast Output Rise and Fall
- Ultra Low Three-State Hold-Off Time (20ns)
• ISL6605 Replacement with Enhanced Performance
• BOOT Capacitor Overcharge Prevention (ISL6609A)
• Low V
F
Internal Bootstrap Diode
• Low Bias Supply Current
• Enable Input and Power-On Reset
• QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
No Leads-Product Outline
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-Free (RoHS Compliant)
Applications
• Core Voltage Supplies for Intel® and AMD®
Microprocessors
• High Frequency Low Profile High Efficiency DC/DC
Converters
• High Current Low Voltage DC/DC Converters
• Synchronous Rectification for Isolated Power Supplies
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
FN9221 Rev 2.00
April 27, 2009
Page 1 of 12

ISL6609CRZ-T Related Products

ISL6609CRZ-T ISL6609ACRZ-T
Description 4 A AND GATE BASED MOSFET DRIVER, PDSO8 4 A AND GATE BASED MOSFET DRIVER, PQCC8
Number of functions 1 1
Number of terminals 8 8
Minimum operating temperature 0.0 Cel 0.0 Cel
Maximum operating temperature 70 Cel 70 Cel
Processing package description ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8 3 X 3 MM, ROHS COMPLIANT, PLASTIC, MO-220VEEC, QFN-8
EU RoHS regulations Yes Yes
state Active ACTIVE
Interface Type AND GATE BASED MOSFET DRIVER AND GATE BASED MOSFET DRIVER
high end driver YES Yes
Rated output peak current limit 4 A 4 A
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
packaging shape RECTANGULAR SQUARE
Package Size SMALL OUTLINE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
surface mount YES Yes
Temperature level COMMERCIAL COMMERCIAL
terminal coating MATTE TIN MATTE TIN
Terminal form GULL WING NO LEAD
Terminal spacing 1.27 mm 0.6500 mm
Terminal location DUAL QUAD
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