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DAN235U

Description
SILICON, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size156KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

DAN235U Overview

SILICON, MIXER DIODE

DAN235U Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-70
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage35 V
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Maximum diode capacitance1.2 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.15 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage35 V
Maximum reverse current0.01 µA
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
DAN235U
Diodes
Band switching diode
DAN235U
Application
High speed switching
External dimensions
(Unit : mm)
Lead size figure
(Unit : mm)
0.8MIN.
2.0±0.2
0.3±0.1
各リードとも
Each lead has same dimension
同寸法
(3)
0.9MIN.
1.25±0.1
2.1±0.1
Features
1) Small mold type. (UMD3)
2) High reliability.
0.15±0.05
1.3
0½0.1
UMD3
(2)
(1)
(0.65)
0.7±0.1
0.9±0.1
Construction
Silicon epitaxial planar
(0.65)
0.1Min
1.3±0.1
Structure
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
Taping dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
0.3±0.1
1.75±0.1
3.5±0.05
8.0±0.2
2.4±0.1
5.5±0.2
2.25±0.1
     0
4.0±0.1
φ0.5±0.05
0½0.1
2.4±0.1
1.25±0.1
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
Power dissipation
Pd
V
R
Reverse voltage (DC)
Junction temperature
Tj
Storage temperature
Tstg
Limits
150
35
125
-55 to +125
Unit
mW
V
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Forward voltage
Reverse current
Capacitance between terminals
Forwad operating resistance
V
F
I
R
Ct
rf
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.0
10
1.2
0.9
Unit
V
nA
pF
Conditions
I
F
=10mA
V
R
=25V
V
R
=6V , f=1MHz
I
F
=2mA , f=100MHz
Rev.B
1.6
0.65
1/3
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