3N258-MLEADFREE datasheet, PDF

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3N258-MLEADFREE: DescriptionBridge Rectifier Diode, 1 Phase, 2A, 800V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size459KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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3N258-MLEADFREE Overview

Bridge Rectifier Diode, 1 Phase, 2A, 800V V(RRM), Silicon,

3N258-MLEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Reach Compliance Code	not_compliant
Minimum breakdown voltage	800 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSIP-W4
JESD-609 code	e3
Maximum non-repetitive peak forward current	55 A
Number of components	4
Phase	1
Number of terminals	4
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
Base Number Matches	1

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3N254-M SERIES

SILICON BRIDGE RECTIFIERS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 3N254-M series

types are silicon single phase, full wave bridge rectifiers

designed for general purpose applications.

MARKING: FULL PART NUMBER

CASE B-M

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

3N

SYMBOL 254-M

Peak Repetitive Reverse Voltage

VRRM

100

DC Blocking Voltage

VR

100

RMS Reverse Voltage

Average Forward Current (TA=55°C)

Peak Forward Surge Current

Operating and Storage

Junction Temperature

ELECTRICAL

SYMBOL

IR

VF

VR(RMS)

IO

IFSM

TJ, Tstg

70

3N

255-M

200

140

3N

256-M

400

280

2.0

55

3N

257-M

600

420

3N

258-M

800

560

3N

259-M UNITS

1000

V

1000

700

V

A

°C

-65 to +150

CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

MAX

VR=Rated VRRM

10

IF=3.14A

1.1

UNITS

μA

V

R3 (25-February 2013)

3N258-MLEADFREE Related Products

	3N258-MLEADFREE	3N255-MLEADFREE	3N257-MLEADFREE	3N259-MLEADFREE	3N254-MLEADFREE	3N256-MLEADFREE
Description	Bridge Rectifier Diode, 1 Phase, 2A, 800V V(RRM), Silicon,	Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon,	Bridge Rectifier Diode, 1 Phase, 2A, 600V V(RRM), Silicon,	Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon,	Bridge Rectifier Diode, 1 Phase, 2A, 100V V(RRM), Silicon,	Bridge Rectifier Diode, 1 Phase, 2A, 400V V(RRM), Silicon,
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
Minimum breakdown voltage	800 V	200 V	600 V	1000 V	100 V	400 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4
JESD-609 code	e3	e3	e3	e3	e3	e3
Maximum non-repetitive peak forward current	55 A	55 A	55 A	55 A	55 A	55 A
Number of components	4	4	4	4	4	4
Phase	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Maximum output current	2 A	2 A	2 A	2 A	2 A	2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	800 V	200 V	600 V	1000 V	100 V	400 V
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	10	10	10	10	10
Base Number Matches	1	1	1	1	1	1

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