6116LA45L32B datasheet, PDF - EEWORLD Datasheet

6116LA45L32B: DescriptionStandard SRAM, 2KX8, 45ns, CMOS, LCC-32; Categorystorage storage; File Size515KB，10 Pages; ManufacturerIDT (Integrated Device Technology)

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6116LA45L32B Overview

Standard SRAM, 2KX8, 45ns, CMOS, LCC-32

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
package instruction	LCC-32
Reach Compliance Code	not_compliant
Maximum access time	45 ns
I/O type	COMMON
JESD-30 code	R-XQCC-N32
JESD-609 code	e0
memory density	16384 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	2KX8
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	QCCN
Encapsulate equivalent code	LCC32,.45X.55
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B
Maximum standby current	0.0002 A
Minimum standby current	2 V
Maximum slew rate	0.095 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	6
Base Number Matches	1

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