Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier （ Infineon ） |
| Parts packaging code | TO-220AB |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 71 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 55 V |
| Maximum drain current (Abs) (ID) | 17 A |
| Maximum drain current (ID) | 17 A |
| Maximum drain-source on-resistance | 0.07 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 225 |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 45 W |
| Maximum power dissipation(Abs) | 45 W |
| Maximum pulsed drain current (IDM) | 68 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| IRFZ24N | |
|---|---|
| Description | Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A) |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier （ Infineon ） |
| Parts packaging code | TO-220AB |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 71 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 55 V |
| Maximum drain current (Abs) (ID) | 17 A |
| Maximum drain current (ID) | 17 A |
| Maximum drain-source on-resistance | 0.07 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 225 |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 45 W |
| Maximum power dissipation(Abs) | 45 W |
| Maximum pulsed drain current (IDM) | 68 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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