Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | International Rectifier ( Infineon ) |
Parts packaging code | SOIC |
package instruction | SO-8 |
Contacts | 8 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | ULTRA-LOW RESISTANCE |
Avalanche Energy Efficiency Rating (Eas) | 223 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (ID) | 11 A |
Maximum drain-source on-resistance | 0.012 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | MS-012AA |
JESD-30 code | R-PDSO-G8 |
Number of components | 1 |
Number of terminals | 8 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 90 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |