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MBR40150ST

Description
Schottky diodes
CategoryDiscrete semiconductor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR40150ST Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: MBR40150ST


parameter:


Repetitive reverse voltage peak Vrrm: 150V


Maximum average rectified current Io: 40A


Maximum forward surge current I FSM: 350A


Forward voltage drop VF: 0.9V when IF=20A


Maximum feedback current IR: 50uA when VR=150V


Package: TO-3PS/TO-247S


MBR40150ST Preview

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MBR4040ST SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
0.732(18.58)
0.715(18.18)
40 to 100 Volts
CURRENT
40 Amperes
0.615(15.60)MAX.
0.520(13.20)
0.504(12.80)
0.402(10.20)
0.385(9.80)
0.185(4.70)
0.169(4.30)
0.516(13.20)
0.504(12.80)
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
0.118(3.0)
MIN.
0.599(15.20)
0.582(14.80)
0.577(14.65)
0.565(14.35)
0.776(19.70)
0.759(19.30)
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
MECHANICAL DATA
• Case: TO-247S/TO-3PS molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
0.071(1.80)
0.055(1.40)
0.095(2.40)
0.078(2.00)
0.050(1.25)
0.037(0.95)
0.166(4.20)
0.149(3.80)
0.579(14.70)
0.563(14.30)
0.103(2.60)
0.090(2.30)
0.025(0.62)
0.014(0.38)
0.223(5.65)
0.206(5.25)
0.223(5.65)
0.206(5.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Ma xi mum Re c urre nt P e a k Re ve rs e Vo lta g e
Ma xi mum RMS Vo lta ge
Ma xi mum D C B lo ck i ng Vo ltag e
Ma xi mum A ve ra g e F o rwar d C ur re nt
P e a k F o rwa rd S urg e C urre nt : 8 .3 ms s i ng le
ha lf s i ne -wa ve s up e ri mp o se d o n ra te d lo a d
(JE D E C me tho d )
Ma xi mum F o rwa rd Vo lta g e a t 2 0 A p e r le g
Ma xi mum D C Re ve rse C urre nt a t
Ra te d D C B lo ck i ng Vo ltag e
Typ i c a l The rma l Re s i sta nc e
Op e ra ti ng Juncti o n a nd S to ra g e Te mp e ra ture
Ra ng e
T
J
=2 5
O
C
T
J
=1 2 5
O
C
S YMB OL
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
R
J
C
T
J
,T
S TG
-5 5 to + 1 5 0
MB R4 0 4 0 S T M B R4 04 5 S T MB R4 0 5 0 S T MB R4 0 60 S T MB R4 0 8 0 S T MB R4 0 9 0 S T MB R4 0 1 0 0 S T
UNITS
V
V
V
A
40
28
40
45
3 1 .5
45
50
35
50
60
42
60
40
80
56
80
90
63
90
100
70
100
350
A
0 .7
0 .7 9
0.1
20
1 .2
-65 to +175
0 .8
0 .0 5
20
O
V
mA
C / W
O
C
Note :
Both Bonding and Chip structure are available.
September 2,2010-REV.02
PAGE . 1

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