IRF9410 datasheet, PDF - EEWORLD Datasheet

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IRF9410: DescriptionPower MOSFET(Vdss=30V, Rds(on)=0.030ohm); CategoryDiscrete semiconductor The transistor; File Size169KB，7 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRF9410 Overview

Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

IRF9410 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	70 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	7 A
Maximum drain current (ID)	7 A
Maximum drain-source on-resistance	0.03 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MS-012AA
JESD-30 code	R-PDSO-G8
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	2.5 W
Maximum pulsed drain current (IDM)	37 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD - 95260

IRF9410PbF

Generation V Technology

Ultra Low On-Resistance

N-Channel MOSFET

Surface Mount

Very Low Gate Charge and

Switching Losses

Fully Avalanche Rated

Lead-Free

HEXFET

Power MOSFET

DSS

= 30V

DS(on)

= 0.030Ω

Top View

Recommended upgrade: IRF7403 or IRF7413

Lower profile/smaller equivalent: IRF7603

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

SO-8

Absolute Maximum Ratings ( T

= 25°C Unless Otherwise Noted)

Symbol

dv/dt

STG

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

= 25°C

= 70°C

Maximum

Units

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

= 25°C

Maximum Power Dissipation

= 70°C

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

± 20

7.0

5.8

2.8

2.5

1.6

4.2

0.25

5.0

-55 to + 150

V/ ns

°C

Thermal Resistance Ratings

Parameter

Maximum Junction-to-Ambient

Symbol

θJA

Limit

Units

°C/W

www.irf.com

09/21/04

IRF9410 Related Products

	IRF9410
Description	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	70 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	7 A
Maximum drain current (ID)	7 A
Maximum drain-source on-resistance	0.03 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MS-012AA
JESD-30 code	R-PDSO-G8
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	2.5 W
Maximum pulsed drain current (IDM)	37 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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