IXLZ10N100 datasheet, PDF - EEWORLD Datasheet

IXLZ10N100: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size681KB，8 Pages; ManufacturerIXYS

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IXLZ10N100 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Maker	IXYS
package instruction	,
Reach Compliance Code	compliant
Configuration	Single
Maximum drain current (Abs) (ID)	10 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
surface mount	NO
Base Number Matches	1

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